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NCE70R540D-VB Product details
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1. NCE70R540D-VB Product Introduction
NCE70R540D-VB is a high-performance single N-channel MOSFET packaged in TO263, designed for high voltage and high current applications. Its drain-source voltage (VDS) can reach 700V, suitable for use in harsh power electronics environments. The threshold voltage (Vth) of the device is 3.5V, ensuring that it can be effectively turned on at a lower gate drive voltage. NCE70R540D-VB adopts advanced SJ_Multi-EPI technology and has excellent conduction characteristics. Its on-resistance (RDS(ON)) is only 600mΩ when VGS is 10V, which can effectively reduce energy loss and improve switching efficiency. This MOSFET is suitable for a variety of high-voltage, high-efficiency power management and drive circuits.
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NCE70R540D-VB is a high-performance single N-channel MOSFET packaged in TO263, designed for high voltage and high current applications. Its drain-source voltage (VDS) can reach 700V, suitable for use in harsh power electronics environments. The threshold voltage (Vth) of the device is 3.5V, ensuring that it can be effectively turned on at a lower gate drive voltage. NCE70R540D-VB adopts advanced SJ_Multi-EPI technology and has excellent conduction characteristics. Its on-resistance (RDS(ON)) is only 600mΩ when VGS is 10V, which can effectively reduce energy loss and improve switching efficiency. This MOSFET is suitable for a variety of high-voltage, high-efficiency power management and drive circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 10A | 600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 10A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 10A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
II. NCE70R540D-VB Parameter Description
| **Parameter** | **Value** | **Description** |
|---------------------|-------------------------------|----------------------------------------------|
| **Package Type** | TO263 | Compact power package suitable for electrical connection and thermal management. |
| **Configuration** | Single N-channel | Suitable for various switching circuits and power conversion applications. |
| **Drain-Source Voltage (VDS)** | 700V | Supports high voltage applications, suitable for power supplies and inverters. |
| **Gate Drive Voltage (VGS)** | ±30V | Adapts to complex drive circuits and ensures good anti-interference ability. |
| **Threshold Voltage (Vth)** | 3.5V | Minimum gate voltage required for turn-on. |
| **On-Resistance (RDS(ON))** | 600mΩ @ VGS=10V | Low conduction loss at full gate voltage. |
| **Maximum drain current (ID)** | 10A | Suitable for medium current loads, supporting a variety of application scenarios. |
| **Technology** | SJ_Multi-EPI | Improves switching efficiency and reduces power consumption, suitable for high-frequency applications. |
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| **Parameter** | **Value** | **Description** |
|---------------------|-------------------------------|----------------------------------------------|
| **Package Type** | TO263 | Compact power package suitable for electrical connection and thermal management. |
| **Configuration** | Single N-channel | Suitable for various switching circuits and power conversion applications. |
| **Drain-Source Voltage (VDS)** | 700V | Supports high voltage applications, suitable for power supplies and inverters. |
| **Gate Drive Voltage (VGS)** | ±30V | Adapts to complex drive circuits and ensures good anti-interference ability. |
| **Threshold Voltage (Vth)** | 3.5V | Minimum gate voltage required for turn-on. |
| **On-Resistance (RDS(ON))** | 600mΩ @ VGS=10V | Low conduction loss at full gate voltage. |
| **Maximum drain current (ID)** | 10A | Suitable for medium current loads, supporting a variety of application scenarios. |
| **Technology** | SJ_Multi-EPI | Improves switching efficiency and reduces power consumption, suitable for high-frequency applications. |
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Domain and module applications：
III. Application fields and module examples
1. **Power converter**
NCE70R540D-VB is widely used in power converters, especially switching power supplies that require high voltage and high efficiency. Its high withstand voltage of 700V and low on-resistance of 600mΩ make it excel in efficient power management, ensuring stable power supply.
2. **Inverter**
In solar and wind inverters, this MOSFET can be used as the main switching element to support energy conversion from high voltage input. Its high current handling capability and good switching characteristics make the application of inverters in power generation systems more efficient and reliable.
3. **Motor drive**
NCE70R540D-VB is suitable for motor drive circuits, capable of handling currents up to 10A, meeting the high current requirements during motor startup and operation, and ensuring efficient drive and control of the motor.
4. **LED driver**
This device is also used in high-voltage LED driver circuits, providing stable switching control to ensure good working conditions of LED lamps under high power and high efficiency conditions.
With its superior electrical characteristics and wide applicability, NCE70R540D-VB has become an ideal choice for high-voltage applications, covering power management, renewable energy, industrial automation and other fields.
1. **Power converter**
NCE70R540D-VB is widely used in power converters, especially switching power supplies that require high voltage and high efficiency. Its high withstand voltage of 700V and low on-resistance of 600mΩ make it excel in efficient power management, ensuring stable power supply.
2. **Inverter**
In solar and wind inverters, this MOSFET can be used as the main switching element to support energy conversion from high voltage input. Its high current handling capability and good switching characteristics make the application of inverters in power generation systems more efficient and reliable.
3. **Motor drive**
NCE70R540D-VB is suitable for motor drive circuits, capable of handling currents up to 10A, meeting the high current requirements during motor startup and operation, and ensuring efficient drive and control of the motor.
4. **LED driver**
This device is also used in high-voltage LED driver circuits, providing stable switching control to ensure good working conditions of LED lamps under high power and high efficiency conditions.
With its superior electrical characteristics and wide applicability, NCE70R540D-VB has become an ideal choice for high-voltage applications, covering power management, renewable energy, industrial automation and other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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