NCE70R360F-VB Product details
Product introduction:
NCE70R360F-VB is a high-performance single-channel N-type power MOSFET in a **TO-220F** package, designed for high-voltage applications. It has a **700V drain-source voltage (VDS)** and a ±30V gate voltage (VGS) to ensure stable operation in harsh environments. The device has an on-resistance (RDS(ON)) of **340mΩ@VGS=10V**, and a maximum continuous drain current (ID) of **15A**, giving it good current carrying capacity and low power consumption. Using **SJ_Multi-EPI** technology, NCE70R360F-VB has excellent performance in high-frequency switching and high-power applications, which can effectively reduce conduction losses and improve power conversion efficiency.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 15A | 340mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
| **Parameter Name** | **Parameter Value** | **Description** |
|----------------------|--------------------------|------------------------------------------|
| **Package** | TO-220F | Good heat dissipation package for high power applications|
| **Configuration** | Single-N | Suitable for power switches and control circuits|
| **Drain-Source Voltage (VDS)** | 700V | Supports high voltage operation and provides greater design flexibility|
| **Gate-Source Voltage (VGS)** | ±30V | Provides a flexible control voltage range|
| **Turn-On Threshold Voltage (Vth)** | 3.5V | The gate needs to exceed this voltage to turn on|
| **On Resistance (RDS(ON))** | 340mΩ @ VGS = 10V | Lower on-resistance helps reduce power loss|
| **Drain Current (ID)** | 15A | Maximum supported current|
| **Technology** | SJ_Multi-EPI | Super junction technology reduces conduction losses and heat dissipation|
| **Operating temperature range** | -55°C ~ +150°C | Wide temperature range ensures stable operation|
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Domain and module applications:
1. **Power converter**
NCE70R360F-VB is commonly used in **high-voltage DC-DC converters** and **AC-DC power adapters**, which can efficiently convert voltage and minimize energy loss. Its 700V VDS is suitable for applications requiring high-voltage output and can meet different load requirements.
2. **Motor drive application**
In **motor drive** systems, this MOSFET can be used to control high-voltage and high-current motors, providing precise speed and torque control. Its high current carrying capacity and low on-resistance make it an ideal choice in industrial automation equipment and power tools.
3. **Battery management system**
NCE70R360F-VB is suitable for **battery charge and discharge management**, especially in **electric vehicles** and **energy storage systems**, to achieve efficient current control and battery protection. Its high withstand voltage characteristics ensure safe and reliable performance during charging and discharging, extending battery life.
4. **High-voltage lighting system**
This MOSFET can be applied to **LED lighting drive circuits**, especially in high-power LED systems that require high voltage, to ensure high efficiency and good thermal management through its low RDS(ON) to improve lighting effects.
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In summary, NCE70R360F-VB has become an ideal choice for multiple fields and modules with its excellent current handling capability and low power consumption, especially in high-voltage and high-efficiency applications.
Technical support:
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