NCE70R2K2I-VB Product details
Product introduction:
NCE70R2K2I-VB is a high-voltage, low-power **single N-channel MOSFET**, packaged in **TO-251**, designed for high-voltage power applications. Its maximum drain-source voltage (VDS) is up to **700V**, which can operate stably in harsh voltage environments. The device supports **±30V gate-source voltage (VGS)** and has a **3.5V threshold voltage (Vth)**, ensuring fast turn-on at a suitable gate voltage. Although the **on-resistance (RDS(ON)) is 2400mΩ@VGS=10V**, which is relatively high, it is designed to provide stability and reliability under high-voltage conditions, with a maximum drain current (ID) of **2A**. The **SJ_Multi-EPI (super junction multi-epitaxial) technology** adopted enhances the voltage resistance of the device, making it very suitable for power conversion and control applications in high-voltage environments.
---
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 2A | 2400mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
| **Parameter** | **Description and value** |
|---------------------------|------------------------------------------|
| **Model** | NCE70R2K2I-VB |
| **Package** | TO-251 |
| **Channel type** | Single-N-Channel |
| **Maximum drain-source voltage (VDS)** | 700V |
| **Gate-source voltage (VGS)** | ±30V |
| **Threshold voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))** | 2400mΩ (@VGS = 10V) |
| **Continuous drain current (ID)** | 2A |
| **Technology** | SJ_Multi-EPI (Superjunction Multi-Epitaxial Technology) |
| **Operating temperature range** | -55°C to +150°C |
| **Power consumption (Ptot)** | 36W |
---
Domain and module applications:
1. **High Voltage Switching Power Supplies**
NCE70R2K2I-VB is suitable for high voltage switching power supply design, can stably handle high voltage input, and is suitable for various power modules to achieve high efficiency conversion.
2. **Power Converters**
In photovoltaic inverters and wind energy conversion systems, this MOSFET can help achieve high voltage and high efficiency energy conversion, ensuring stable output of renewable energy.
3. **Uninterruptible Power Supply (UPS Systems)**
In UPS systems, NCE70R2K2I-VB, as part of the inverter, can ensure fast switching of power in the event of a power outage, providing reliable power supply for critical loads.
4. **Motor Control Applications**
In some low power motor control applications, this MOSFET can stably provide control signals to support the drive and control of small motors, especially in high voltage environments.
5. **Medical Equipment**
In some medical equipment that requires high voltage power supply, NCE70R2K2I-VB can provide reliable power management for the equipment to ensure the stability and safety of the medical equipment.
---
With its high voltage withstand capability and flexibility in various applications, NCE70R2K2I-VB is an ideal choice in high voltage power supply design, meeting the needs of modern industry and energy management.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image