中文
English
NCE70R260D-VB Product details
Back to previous pageProduct introduction：
1. NCE70R260D-VB Product Introduction
NCE70R260D-VB is a high-voltage single N-channel power MOSFET in a TO-263 package, designed for high performance and high reliability. The MOSFET has a withstand voltage (V\(_{DS}\)) of 700V, suitable for high voltage applications. Its gate voltage (V\(_{GS}\)) range is ±30V, with a threshold voltage (V\(_{th}\)) of 3.5V, ensuring fast response. The NCE70R260D-VB has an R\(_{DS(ON)}\) of 210mΩ at V\(_{GS}\) = 10V, providing low conduction losses and supporting a maximum continuous drain current of 20A. Using **Super-Junction (SJ) Multi-EPI process**, this MOSFET performs well in high-voltage and high-efficiency power applications and is suitable for a variety of power electronic modules.
---
NCE70R260D-VB is a high-voltage single N-channel power MOSFET in a TO-263 package, designed for high performance and high reliability. The MOSFET has a withstand voltage (V\(_{DS}\)) of 700V, suitable for high voltage applications. Its gate voltage (V\(_{GS}\)) range is ±30V, with a threshold voltage (V\(_{th}\)) of 3.5V, ensuring fast response. The NCE70R260D-VB has an R\(_{DS(ON)}\) of 210mΩ at V\(_{GS}\) = 10V, providing low conduction losses and supporting a maximum continuous drain current of 20A. Using **Super-Junction (SJ) Multi-EPI process**, this MOSFET performs well in high-voltage and high-efficiency power applications and is suitable for a variety of power electronic modules.
---
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 20A | 210mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
II. NCE70R260D-VB Detailed parameter description
| **Parameter** | **Value** | **Description** |
|---------------------|-------------------------------|---------------------------------------|
| **Package** | TO-263 | Compact package for good thermal management|
| **Channel type** | Single N-channel | Enhancement mode MOSFET for high voltage switching applications|
| **V\(_{DS}\)** | 700V | Maximum drain-source voltage|
| **V\(_{GS}\)** | ±30V | Gate-source voltage range|
| **V\(_{th}\)** | 3.5V | Minimum gate turn-on voltage|
| **R\(_{DS(ON)}\)** | 210mΩ (V\(_{GS}\)=10V) | Drain-source resistance at on-state|
| **I\(_D\)** | 20A | Maximum continuous drain current|
| **Technology** | SJ Multi-EPI | Superjunction technology for improved efficiency and reduced losses|
| **Operating temperature range** | -55°C to 150°C | Wide operating temperature range|
---
| **Parameter** | **Value** | **Description** |
|---------------------|-------------------------------|---------------------------------------|
| **Package** | TO-263 | Compact package for good thermal management|
| **Channel type** | Single N-channel | Enhancement mode MOSFET for high voltage switching applications|
| **V\(_{DS}\)** | 700V | Maximum drain-source voltage|
| **V\(_{GS}\)** | ±30V | Gate-source voltage range|
| **V\(_{th}\)** | 3.5V | Minimum gate turn-on voltage|
| **R\(_{DS(ON)}\)** | 210mΩ (V\(_{GS}\)=10V) | Drain-source resistance at on-state|
| **I\(_D\)** | 20A | Maximum continuous drain current|
| **Technology** | SJ Multi-EPI | Superjunction technology for improved efficiency and reduced losses|
| **Operating temperature range** | -55°C to 150°C | Wide operating temperature range|
---
Domain and module applications：
III. Applicable fields and module application examples
1. **Power conversion module**
NCE70R260D-VB is particularly suitable for **high-voltage switching power supplies (SMPS)** and **DC-DC converters**, such as power supply systems for industrial equipment and communication equipment. Due to its high withstand voltage and low on-resistance, this MOSFET has significant advantages in improving power efficiency and reducing energy loss.
2. **Motor drive and control system**
In **motor drives**, NCE70R260D-VB can be used as a key switching element in the inverter, suitable for high-power motor control and variable frequency drives. Its high current carrying capacity enables it to effectively control the start-up and operation of AC motors.
3. **New energy and photovoltaic applications**
NCE70R260D-VB can be widely used in **photovoltaic inverters** and **wind energy conversion systems**, acting as a power conversion module to ensure stable operation under high voltage conditions and improve energy conversion efficiency.
4. **EV Charging System**
In **EV charging piles** and charging systems, NCE70R260D-VB acts as a power switch to handle high voltage and high current charging processes, ensuring a fast and safe charging experience.
5. **Power Electronics Applications**
In addition, NCE70R260D-VB is also suitable for **high-power LED drivers** and **power factor correction (PFC)** modules, which can effectively manage power conversion in demanding power electronics environments.
As a high-efficiency and high-reliability MOSFET, NCE70R260D-VB has demonstrated excellent performance in multiple fields and applications, meeting the needs of high voltage and high efficiency.
1. **Power conversion module**
NCE70R260D-VB is particularly suitable for **high-voltage switching power supplies (SMPS)** and **DC-DC converters**, such as power supply systems for industrial equipment and communication equipment. Due to its high withstand voltage and low on-resistance, this MOSFET has significant advantages in improving power efficiency and reducing energy loss.
2. **Motor drive and control system**
In **motor drives**, NCE70R260D-VB can be used as a key switching element in the inverter, suitable for high-power motor control and variable frequency drives. Its high current carrying capacity enables it to effectively control the start-up and operation of AC motors.
3. **New energy and photovoltaic applications**
NCE70R260D-VB can be widely used in **photovoltaic inverters** and **wind energy conversion systems**, acting as a power conversion module to ensure stable operation under high voltage conditions and improve energy conversion efficiency.
4. **EV Charging System**
In **EV charging piles** and charging systems, NCE70R260D-VB acts as a power switch to handle high voltage and high current charging processes, ensuring a fast and safe charging experience.
5. **Power Electronics Applications**
In addition, NCE70R260D-VB is also suitable for **high-power LED drivers** and **power factor correction (PFC)** modules, which can effectively manage power conversion in demanding power electronics environments.
As a high-efficiency and high-reliability MOSFET, NCE70R260D-VB has demonstrated excellent performance in multiple fields and applications, meeting the needs of high voltage and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
