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NCE70R1K2I-VB Product details
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1. NCE70R1K2I-VB Product Introduction
NCE70R1K2I-VB is a high-voltage single N-channel MOSFET packaged in TO251, designed for high voltage and medium current applications. Its drain-source voltage (VDS) can be as high as 700V, suitable for harsh power electronics environments. The threshold voltage (Vth) of the device is 3.5V, ensuring that it can be turned on at a lower gate drive voltage. NCE70R1K2I-VB uses super junction (SJ) and multi-epitaxy (Multi-EPI) technology, with a lower on-resistance (RDS(ON)). When VGS is 10V, the on-resistance is 1000mΩ. This design not only improves the switching efficiency of the device, but also significantly reduces power consumption and ensures its stability in high-frequency applications.
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NCE70R1K2I-VB is a high-voltage single N-channel MOSFET packaged in TO251, designed for high voltage and medium current applications. Its drain-source voltage (VDS) can be as high as 700V, suitable for harsh power electronics environments. The threshold voltage (Vth) of the device is 3.5V, ensuring that it can be turned on at a lower gate drive voltage. NCE70R1K2I-VB uses super junction (SJ) and multi-epitaxy (Multi-EPI) technology, with a lower on-resistance (RDS(ON)). When VGS is 10V, the on-resistance is 1000mΩ. This design not only improves the switching efficiency of the device, but also significantly reduces power consumption and ensures its stability in high-frequency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
II. NCE70R1K2I-VB Parameter Description
| **Parameter** | **Value** | **Description** |
|---------------------|-------------------------------|----------------------------------------------|
| **Package Type** | TO251 | Medium power package, suitable for electrical connection and thermal management. |
| **Configuration** | Single N-channel | Suitable for high voltage switching circuits and power modules. |
| **Drain-Source Voltage (VDS)** | 700V | Supports high voltage applications, widely used in power supplies and inverters. |
| **Gate Drive Voltage (VGS)** | ±30V | Adapts to complex drive circuits and ensures good anti-interference ability. |
| **Threshold Voltage (Vth)** | 3.5V | Minimum gate voltage required for turn-on. |
| **On-Resistance (RDS(ON))** | 1000mΩ @ VGS=10V | Low conduction loss at full gate voltage. |
| **Maximum drain current (ID)** | 5A | Supports medium current load, suitable for a variety of application scenarios. |
| **Technology** | SJ_Multi-EPI | Improves switching efficiency and reduces power consumption, suitable for high-frequency applications. |
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| **Parameter** | **Value** | **Description** |
|---------------------|-------------------------------|----------------------------------------------|
| **Package Type** | TO251 | Medium power package, suitable for electrical connection and thermal management. |
| **Configuration** | Single N-channel | Suitable for high voltage switching circuits and power modules. |
| **Drain-Source Voltage (VDS)** | 700V | Supports high voltage applications, widely used in power supplies and inverters. |
| **Gate Drive Voltage (VGS)** | ±30V | Adapts to complex drive circuits and ensures good anti-interference ability. |
| **Threshold Voltage (Vth)** | 3.5V | Minimum gate voltage required for turn-on. |
| **On-Resistance (RDS(ON))** | 1000mΩ @ VGS=10V | Low conduction loss at full gate voltage. |
| **Maximum drain current (ID)** | 5A | Supports medium current load, suitable for a variety of application scenarios. |
| **Technology** | SJ_Multi-EPI | Improves switching efficiency and reduces power consumption, suitable for high-frequency applications. |
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Domain and module applications：
III. Application fields and module examples
1. **Industrial power converter**
NCE70R1K2I-VB can be used as the main switch module of industrial power converter. Its high withstand voltage of 700V enables it to handle high voltage power supply, ensuring the stability and efficiency of the system in high voltage environment.
2. **Solar inverter**
In the solar power generation system, this MOSFET can be used as a switching element in the inverter. Its low on-resistance and high withstand voltage characteristics can effectively improve the energy conversion efficiency of the inverter and ensure the efficient use of solar energy.
3. **High-voltage drive circuit**
NCE70R1K2I-VB is suitable for high-voltage drive circuits, such as motor drive and induction heating applications. Its high withstand voltage and reliability ensure stable operation during long-term operation, meeting the needs of industrial automation.
4. **LED lighting driver**
This device can be used in high-voltage LED lighting driver circuits to provide efficient switch control, reduce energy consumption, while maintaining LED brightness and stability, suitable for a variety of indoor and outdoor lighting applications.
NCE70R1K2I-VB has excellent electrical performance and is an ideal choice for a variety of high-voltage, high-efficiency applications, covering a wide range of fields such as power management, renewable energy and industrial control.
1. **Industrial power converter**
NCE70R1K2I-VB can be used as the main switch module of industrial power converter. Its high withstand voltage of 700V enables it to handle high voltage power supply, ensuring the stability and efficiency of the system in high voltage environment.
2. **Solar inverter**
In the solar power generation system, this MOSFET can be used as a switching element in the inverter. Its low on-resistance and high withstand voltage characteristics can effectively improve the energy conversion efficiency of the inverter and ensure the efficient use of solar energy.
3. **High-voltage drive circuit**
NCE70R1K2I-VB is suitable for high-voltage drive circuits, such as motor drive and induction heating applications. Its high withstand voltage and reliability ensure stable operation during long-term operation, meeting the needs of industrial automation.
4. **LED lighting driver**
This device can be used in high-voltage LED lighting driver circuits to provide efficient switch control, reduce energy consumption, while maintaining LED brightness and stability, suitable for a variety of indoor and outdoor lighting applications.
NCE70R1K2I-VB has excellent electrical performance and is an ideal choice for a variety of high-voltage, high-efficiency applications, covering a wide range of fields such as power management, renewable energy and industrial control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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