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NCE70R1K2F-VB Product details
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1. NCE70R1K2F-VB Product Introduction
NCE70R1K2F-VB is a **single N-channel power MOSFET**, using **TO-220F package**, designed for high voltage applications. Its **drain-source voltage (V_DS)** is as high as **700V**, suitable for various high voltage environments. The gate-source voltage (V_GS) can reach ±30V, ensuring adaptation to complex control circuits. The device has a threshold voltage (V_th) of 3.5V and an on-resistance (R_DS(ON)) of **1100mΩ** (at V_GS=10V), which enables it to have good performance in switching applications. NCE70R1K2F-VB adopts **Super Junction (SJ) multi-layer EPI technology**, which is designed to improve current handling capability and reduce switching losses, and is widely used in power conversion, motor control and renewable energy systems.
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NCE70R1K2F-VB is a **single N-channel power MOSFET**, using **TO-220F package**, designed for high voltage applications. Its **drain-source voltage (V_DS)** is as high as **700V**, suitable for various high voltage environments. The gate-source voltage (V_GS) can reach ±30V, ensuring adaptation to complex control circuits. The device has a threshold voltage (V_th) of 3.5V and an on-resistance (R_DS(ON)) of **1100mΩ** (at V_GS=10V), which enables it to have good performance in switching applications. NCE70R1K2F-VB adopts **Super Junction (SJ) multi-layer EPI technology**, which is designed to improve current handling capability and reduce switching losses, and is widely used in power conversion, motor control and renewable energy systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 5A | 1100mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
II. NCE70R1K2F-VB Parameter Description
| **Parameter** | **Value** | **Description** |
|-----------------------|------------------------|--------------------------------|
| **Package** | TO-220F | Provides good heat dissipation capability|
| **Channel type** | Single N-channel | Suitable for high-efficiency switching circuits|
| **Drain-source voltage (V_DS)** | 700V | Supports high-voltage applications|
| **Gate-source voltage (V_GS)** | ±30V | High-voltage tolerance for complex control signals|
| **Turning voltage (V_th)** | 3.5V | Threshold voltage required for gate turn-on|
| **On-resistance (R_DS(ON))** | 1100mΩ @ V_GS=10V | Typical on-resistance at 10V gate drive|
| **Maximum drain current (I_D)** | 5A | Maximum current capability|
| **Technology** | SJ_Multi-EPI | Technology to improve voltage capability and efficiency|
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| **Parameter** | **Value** | **Description** |
|-----------------------|------------------------|--------------------------------|
| **Package** | TO-220F | Provides good heat dissipation capability|
| **Channel type** | Single N-channel | Suitable for high-efficiency switching circuits|
| **Drain-source voltage (V_DS)** | 700V | Supports high-voltage applications|
| **Gate-source voltage (V_GS)** | ±30V | High-voltage tolerance for complex control signals|
| **Turning voltage (V_th)** | 3.5V | Threshold voltage required for gate turn-on|
| **On-resistance (R_DS(ON))** | 1100mΩ @ V_GS=10V | Typical on-resistance at 10V gate drive|
| **Maximum drain current (I_D)** | 5A | Maximum current capability|
| **Technology** | SJ_Multi-EPI | Technology to improve voltage capability and efficiency|
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Domain and module applications：
III. Application fields and module examples
1. **Power conversion (switching power supply and PFC circuit)**
- NCE70R1K2F-VB is suitable for various **switching power supply (SMPS)** applications, including AC-DC converters and DC-DC converters. Due to its high voltage characteristics and low power consumption, energy loss is minimized, which can improve the overall efficiency of the power supply.
- In **power factor correction (PFC)** circuits, its stability and high efficiency help improve the power factor of the power supply.
2. **Motor control**
- In **motor drives** and **variable frequency drives (VFD)**, NCE70R1K2F-VB can handle high current and high voltage, suitable for industrial motor control and home appliances, providing stable drive current for motors.
- This MOSFET performs particularly well in applications with high switching frequencies, improving the flexibility and efficiency of motor control.
3. **Renewable Energy (Solar Inverters and Wind Power Generation)**
- In **Solar Inverters**, the NCE70R1K2F-VB can efficiently convert DC to AC, suitable for the high voltage and high power requirements in photovoltaic systems, ensuring stable energy output.
- This MOSFET can also be used in **Wind Power Generation Systems** to achieve efficient power conversion in high voltage environments.
4. **Lighting Driver Circuits**
- The NCE70R1K2F-VB performs well in high-power **LED lighting** applications and is suitable for commercial and industrial lighting solutions, providing stable current and supporting efficient dimming functions.
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With its excellent electrical performance and high voltage tolerance, the NCE70R1K2F-VB has become an important part of high-efficiency solutions in the fields of power management, industrial automation and renewable energy.
1. **Power conversion (switching power supply and PFC circuit)**
- NCE70R1K2F-VB is suitable for various **switching power supply (SMPS)** applications, including AC-DC converters and DC-DC converters. Due to its high voltage characteristics and low power consumption, energy loss is minimized, which can improve the overall efficiency of the power supply.
- In **power factor correction (PFC)** circuits, its stability and high efficiency help improve the power factor of the power supply.
2. **Motor control**
- In **motor drives** and **variable frequency drives (VFD)**, NCE70R1K2F-VB can handle high current and high voltage, suitable for industrial motor control and home appliances, providing stable drive current for motors.
- This MOSFET performs particularly well in applications with high switching frequencies, improving the flexibility and efficiency of motor control.
3. **Renewable Energy (Solar Inverters and Wind Power Generation)**
- In **Solar Inverters**, the NCE70R1K2F-VB can efficiently convert DC to AC, suitable for the high voltage and high power requirements in photovoltaic systems, ensuring stable energy output.
- This MOSFET can also be used in **Wind Power Generation Systems** to achieve efficient power conversion in high voltage environments.
4. **Lighting Driver Circuits**
- The NCE70R1K2F-VB performs well in high-power **LED lighting** applications and is suitable for commercial and industrial lighting solutions, providing stable current and supporting efficient dimming functions.
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With its excellent electrical performance and high voltage tolerance, the NCE70R1K2F-VB has become an important part of high-efficiency solutions in the fields of power management, industrial automation and renewable energy.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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