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NCE70R1K2D-VB Product details
Back to previous pageProduct introduction：
1. NCE70R1K2D-VB Product Introduction
NCE70R1K2D-VB is a single-channel N-type power MOSFET in a **TO-263** package, designed for high-voltage applications. It has a **700V drain-source voltage (VDS)** and a ±30V gate voltage (VGS), enabling it to operate stably in a high-voltage environment. The device has an on-resistance (RDS(ON)) of **750mΩ@VGS=10V**, and a maximum continuous drain current (ID) of **7A**, providing good current carrying capacity and low power consumption characteristics. Using **SJ_Multi-EPI (super junction multilayer epitaxy) technology**, NCE70R1K2D-VB can effectively reduce conduction losses and improve switching efficiency, and is particularly suitable for use in high-voltage and high-frequency applications.
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NCE70R1K2D-VB is a single-channel N-type power MOSFET in a **TO-263** package, designed for high-voltage applications. It has a **700V drain-source voltage (VDS)** and a ±30V gate voltage (VGS), enabling it to operate stably in a high-voltage environment. The device has an on-resistance (RDS(ON)) of **750mΩ@VGS=10V**, and a maximum continuous drain current (ID) of **7A**, providing good current carrying capacity and low power consumption characteristics. Using **SJ_Multi-EPI (super junction multilayer epitaxy) technology**, NCE70R1K2D-VB can effectively reduce conduction losses and improve switching efficiency, and is particularly suitable for use in high-voltage and high-frequency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 7A | 750mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
II. NCE70R1K2D-VB Parameter Description
| **Parameter Name** | **Parameter Value** | **Description** |
|----------------------|--------------------------|------------------------------------------|
| **Package** | TO-263 | Small package design, suitable for space-limited applications|
| **Configuration** | Single-N channel (Single-N) | Suitable for power switches and control circuits|
| **Drain-Source Voltage (VDS)** | 700V | Adapt to high-voltage operation and provide greater design flexibility|
| **Gate-Source Voltage (VGS)** | ±30V | Provides flexible control voltage range|
| **Turn-On Threshold Voltage (Vth)** | 3.5V | The gate needs to exceed this voltage to turn on|
| **On-Resistance (RDS(ON))** | 750mΩ @ VGS = 10V | Lower on-resistance helps reduce power loss|
| **Drain Current (ID)** | 7A | Maximum supported current|
| **Technology** | SJ_Multi-EPI | Super junction technology reduces conduction loss and heat dissipation|
| **Operating temperature range** | -55°C ~ +150°C | Wide temperature range ensures stable operation|
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| **Parameter Name** | **Parameter Value** | **Description** |
|----------------------|--------------------------|------------------------------------------|
| **Package** | TO-263 | Small package design, suitable for space-limited applications|
| **Configuration** | Single-N channel (Single-N) | Suitable for power switches and control circuits|
| **Drain-Source Voltage (VDS)** | 700V | Adapt to high-voltage operation and provide greater design flexibility|
| **Gate-Source Voltage (VGS)** | ±30V | Provides flexible control voltage range|
| **Turn-On Threshold Voltage (Vth)** | 3.5V | The gate needs to exceed this voltage to turn on|
| **On-Resistance (RDS(ON))** | 750mΩ @ VGS = 10V | Lower on-resistance helps reduce power loss|
| **Drain Current (ID)** | 7A | Maximum supported current|
| **Technology** | SJ_Multi-EPI | Super junction technology reduces conduction loss and heat dissipation|
| **Operating temperature range** | -55°C ~ +150°C | Wide temperature range ensures stable operation|
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Domain and module applications：
III. Applicable fields and application modules of NCE70R1K2D-VB
1. **Power converter**
NCE70R1K2D-VB is commonly used in **high-voltage DC-DC converters** and **AC-DC power adapters**, which can efficiently convert voltage and reduce energy loss. Its 700V VDS makes it suitable for applications requiring high-voltage output.
2. **Industrial drive applications**
In **motor drive** systems, this MOSFET can control high-voltage and high-current motors to provide precise speed and torque control. Its high current carrying capacity and low on-resistance make it an ideal choice in industrial automation equipment.
3. **Battery management system**
NCE70R1K2D-VB is suitable for **battery charge and discharge management**, especially in **electric vehicles** and **energy storage systems**, for efficient current control and battery protection. Its high withstand voltage characteristics ensure safe and reliable performance during charging and discharging.
4. **High-voltage lighting system**
This MOSFET can be applied to **LED lighting drive circuits**, especially in high-power LED systems that require high voltage, to ensure high efficiency and good thermal management through its low RDS(ON) to improve lighting effects.
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In summary, NCE70R1K2D-VB has become an ideal choice for multiple fields and modules with its superior current handling capability and low power consumption, especially in high-voltage and high-efficiency applications.
1. **Power converter**
NCE70R1K2D-VB is commonly used in **high-voltage DC-DC converters** and **AC-DC power adapters**, which can efficiently convert voltage and reduce energy loss. Its 700V VDS makes it suitable for applications requiring high-voltage output.
2. **Industrial drive applications**
In **motor drive** systems, this MOSFET can control high-voltage and high-current motors to provide precise speed and torque control. Its high current carrying capacity and low on-resistance make it an ideal choice in industrial automation equipment.
3. **Battery management system**
NCE70R1K2D-VB is suitable for **battery charge and discharge management**, especially in **electric vehicles** and **energy storage systems**, for efficient current control and battery protection. Its high withstand voltage characteristics ensure safe and reliable performance during charging and discharging.
4. **High-voltage lighting system**
This MOSFET can be applied to **LED lighting drive circuits**, especially in high-power LED systems that require high voltage, to ensure high efficiency and good thermal management through its low RDS(ON) to improve lighting effects.
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In summary, NCE70R1K2D-VB has become an ideal choice for multiple fields and modules with its superior current handling capability and low power consumption, especially in high-voltage and high-efficiency applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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