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NCE70R180-VB Product details

Product introduction:

1. NCE70R180-VB Product Introduction
NCE70R180-VB is a high-performance single N-channel MOSFET in a **TO-220** package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) reaches **700V**, and it works stably within the gate-source voltage (VGS) range of ±30V, suitable for various power conversion and control circuits. The on-resistance (RDS(ON)) of NCE70R180-VB is **210mΩ@VGS=10V**, ensuring efficient energy transmission at an on-current (ID) of **20A**. The device adopts **Super Junction (Super Junction) multi-epitaxial technology (SJ_Multi-EPI)**, which effectively reduces switching losses and improves overall efficiency, and is widely used in industrial and power electronics fields.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 700V 3.5V 20A 210mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 700V 3.5V 20A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 700V 3.5V 20A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
II. NCE70R180-VB Detailed Parameters
| **Parameter** | **Specification** | **Description** |
|-----------------------|------------------------------|-----------------------------------------|
| **Package Type** | TO-220 | Suitable for high power and high heat dissipation requirements. |
| **Channel Configuration** | Single N-channel | Provides excellent switching performance and high efficiency. |
| **Drain-Source Voltage (VDS)** | 700V | Supports high voltage applications and ensures power stability. |
| **Gate-Source Voltage (VGS)** | ±30V | Wide voltage range supports a variety of drive circuits. |
| **Threshold Voltage (Vth)** | 3.5V | Indicates the minimum voltage at which the gate is turned on. |
| **On-Resistance (RDS(ON))** | 210mΩ @ VGS=10V | Low conduction loss, improves system efficiency. |
| **Drain Current (ID)** | 20A | Suitable for medium current applications, meeting various load requirements. |
| **Technology Type** | SJ_Multi-EPI | Super junction technology provides lower losses and higher energy efficiency. |
| **Operating Temperature Range** | -55°C ~ 150°C | Stable operation in extreme environments. |

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Domain and module applications:

III. NCE70R180-VB Application Fields and Module Examples
1. **Switching Power Supplies**
NCE70R180-VB can be used as the main switching element in switching power supplies. Its high withstand voltage and low on-resistance help improve power efficiency and reduce heat loss.

2. **Electric Vehicle Chargers**
This MOSFET is very suitable for high-voltage conversion and current management in electric vehicle chargers, ensuring safe and reliable power transmission.

3. **Inverters**
In photovoltaic and wind power inverters, NCE70R180-VB can be used to convert DC power to AC power, supporting high voltage operation of **700V**, and improving the efficiency of renewable energy use.

4. **Industrial Equipment**
Suitable for motor drive control and other industrial automation systems, NCE70R180-VB can provide stable power support under high load conditions.

5. **Power Management Systems**
The device can be used in various power management applications, such as DC-DC converters, to maintain high efficiency and good dynamic response under different load conditions.

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NCE70R180-VB's high withstand voltage, low on-resistance and super junction technology make it an ideal choice for power management, industrial control and renewable energy fields, meeting the needs of efficient energy conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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