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NCE70N100I-VB Product details
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1. NCE70N100I-VB Product Introduction
NCE70N100I-VB is a single N-channel MOSFET in TO251 package, designed for high-efficiency power management and switching applications. It has a drain-source voltage (VDS) of **100V, can withstand high-voltage environments, and is suitable for various power conversion applications. The device supports a gate-source voltage (VGS) of **±20V, and has a threshold voltage (Vth) of **1.8V, enabling it to turn on quickly at a lower drive voltage. Its **RDS(ON)** is **12.5mΩ**, and it has extremely low conduction losses at **VGS=10V**, and can provide up to **65A of continuous current (ID)**, performing well in high-frequency switching and high-power applications. The **Trench technology** design of this MOSFET further reduces the on-resistance, improves the overall energy efficiency, and ensures the stability of the device under harsh conditions.
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NCE70N100I-VB is a single N-channel MOSFET in TO251 package, designed for high-efficiency power management and switching applications. It has a drain-source voltage (VDS) of **100V, can withstand high-voltage environments, and is suitable for various power conversion applications. The device supports a gate-source voltage (VGS) of **±20V, and has a threshold voltage (Vth) of **1.8V, enabling it to turn on quickly at a lower drive voltage. Its **RDS(ON)** is **12.5mΩ**, and it has extremely low conduction losses at **VGS=10V**, and can provide up to **65A of continuous current (ID)**, performing well in high-frequency switching and high-power applications. The **Trench technology** design of this MOSFET further reduces the on-resistance, improves the overall energy efficiency, and ensures the stability of the device under harsh conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 65A | 12.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 65A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 65A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
II. Detailed parameter description of NCE70N100I-VB
| Parameter | Description | Value |
|----------|---------------------------|---------------------------|
| **Package type** | TO251 | Surface mount, compact design|
| **Configuration** | Single N-channel MOSFET | Suitable for single-channel control circuit|
| **Drain-source voltage (VDS)** | Maximum withstand voltage capability| 100V |
| **Gate-source voltage (VGS)** | Gate drive voltage range| ±20V |
| **Threshold voltage (Vth)** | Gate turn-on voltage| 1.8V |
| **On-resistance (RDS(ON))** | At VGS = 10V| 12.5mΩ |
| **Continuous drain current (ID)** | Maximum carrying current| 65A |
| **Technology type** | Trench technology | Improve switching efficiency and reduce losses |
| **Operating temperature range** | Typical -55°C ~ +150°C | Wide temperature adaptability |
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| Parameter | Description | Value |
|----------|---------------------------|---------------------------|
| **Package type** | TO251 | Surface mount, compact design|
| **Configuration** | Single N-channel MOSFET | Suitable for single-channel control circuit|
| **Drain-source voltage (VDS)** | Maximum withstand voltage capability| 100V |
| **Gate-source voltage (VGS)** | Gate drive voltage range| ±20V |
| **Threshold voltage (Vth)** | Gate turn-on voltage| 1.8V |
| **On-resistance (RDS(ON))** | At VGS = 10V| 12.5mΩ |
| **Continuous drain current (ID)** | Maximum carrying current| 65A |
| **Technology type** | Trench technology | Improve switching efficiency and reduce losses |
| **Operating temperature range** | Typical -55°C ~ +150°C | Wide temperature adaptability |
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Domain and module applications：
III. Application fields and typical module examples
1. **Switching Power Supply (SMPS)**
- NCE70N100I-VB can be used as the main switching element in the switching power supply, providing efficient power conversion, meeting high voltage and high current requirements, and is widely used in industrial power supplies and consumer electronics.
2. **LED Driver**
- This MOSFET can be used in LED lighting drive circuits, with low on-resistance and high current capability, ensuring efficient power transmission and extending the service life of LEDs.
3. **Motor Control System**
- In motor drive and control modules, NCE70N100I-VB can be used as a high-power switch, supporting high-frequency PWM control, and improving the efficiency and response speed of the motor.
4. **Electric Vehicles and Charging Equipment**
- In electric vehicle charging systems, this MOSFET can be used for high-voltage DC conversion and power management, ensuring efficient power conversion and safe charging process.
5. **Industrial Equipment and Robotics**
- This MOSFET can be used as a power switch in industrial automation and robotics applications, supporting the driving of various sensors and actuators to ensure efficient and stable operation of the system.
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NCE70N100I-VB is a high-performance single N-channel MOSFET. With its superior conductivity and high voltage tolerance, it is widely used in power management, electric vehicles, industrial control and LED driving. The use of its Trench technology not only improves work efficiency, but also provides designers with more flexible application solutions.
1. **Switching Power Supply (SMPS)**
- NCE70N100I-VB can be used as the main switching element in the switching power supply, providing efficient power conversion, meeting high voltage and high current requirements, and is widely used in industrial power supplies and consumer electronics.
2. **LED Driver**
- This MOSFET can be used in LED lighting drive circuits, with low on-resistance and high current capability, ensuring efficient power transmission and extending the service life of LEDs.
3. **Motor Control System**
- In motor drive and control modules, NCE70N100I-VB can be used as a high-power switch, supporting high-frequency PWM control, and improving the efficiency and response speed of the motor.
4. **Electric Vehicles and Charging Equipment**
- In electric vehicle charging systems, this MOSFET can be used for high-voltage DC conversion and power management, ensuring efficient power conversion and safe charging process.
5. **Industrial Equipment and Robotics**
- This MOSFET can be used as a power switch in industrial automation and robotics applications, supporting the driving of various sensors and actuators to ensure efficient and stable operation of the system.
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NCE70N100I-VB is a high-performance single N-channel MOSFET. With its superior conductivity and high voltage tolerance, it is widely used in power management, electric vehicles, industrial control and LED driving. The use of its Trench technology not only improves work efficiency, but also provides designers with more flexible application solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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