中文
English
NCE6990D-VB Product details
Back to previous pageProduct introduction：
1. NCE6990D-VB Product Introduction
NCE6990D-VB is a single-channel N-type power MOSFET in a **TO-263** package, designed for high-efficiency and high-current applications. It has a **60V drain-source voltage (VDS)** and a gate voltage (VGS) of ±20V, which can meet the needs of a variety of high-power circuits. The device has an on-resistance (RDS(ON)) of only **4mΩ@VGS=10V**, and a maximum continuous drain current (ID) of **150A**, showing excellent current carrying capacity and low loss characteristics. Using **Trench technology**, this MOSFET performs well in high-current and high-efficiency conversion, and is suitable for high-performance power management and drive circuits.
---
NCE6990D-VB is a single-channel N-type power MOSFET in a **TO-263** package, designed for high-efficiency and high-current applications. It has a **60V drain-source voltage (VDS)** and a gate voltage (VGS) of ±20V, which can meet the needs of a variety of high-power circuits. The device has an on-resistance (RDS(ON)) of only **4mΩ@VGS=10V**, and a maximum continuous drain current (ID) of **150A**, showing excellent current carrying capacity and low loss characteristics. Using **Trench technology**, this MOSFET performs well in high-current and high-efficiency conversion, and is suitable for high-performance power management and drive circuits.
---
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
II. NCE6990D-VB Parameter Description
| **Parameter Name** | **Parameter Value** | **Description** |
|----------------------|--------------------------|------------------------------------------|
| **Package** | TO-263 | Small package design, suitable for applications with limited space|
| **Configuration** | Single-N channel (Single-N) | Suitable for power switches and control circuits|
| **Drain-Source Voltage (VDS)** | 60V | Adapt to high voltage operation|
| **Gate-Source Voltage (VGS)** | ±20V | Provides flexible control voltage range|
| **Turn-On Threshold Voltage (Vth)** | 3V | The gate needs to exceed this voltage to turn on|
| **On-Resistance (RDS(ON))** | 4mΩ @ VGS = 10V | Extremely low on-resistance can effectively reduce power loss|
| **Drain Current (ID)** | 150A | Maximum current supported|
| **Technology** | Trench | Trench technology improves switching speed and efficiency|
| **Operating temperature range** | -55°C ~ +150°C | Wide temperature range ensures stable operation|
---
| **Parameter Name** | **Parameter Value** | **Description** |
|----------------------|--------------------------|------------------------------------------|
| **Package** | TO-263 | Small package design, suitable for applications with limited space|
| **Configuration** | Single-N channel (Single-N) | Suitable for power switches and control circuits|
| **Drain-Source Voltage (VDS)** | 60V | Adapt to high voltage operation|
| **Gate-Source Voltage (VGS)** | ±20V | Provides flexible control voltage range|
| **Turn-On Threshold Voltage (Vth)** | 3V | The gate needs to exceed this voltage to turn on|
| **On-Resistance (RDS(ON))** | 4mΩ @ VGS = 10V | Extremely low on-resistance can effectively reduce power loss|
| **Drain Current (ID)** | 150A | Maximum current supported|
| **Technology** | Trench | Trench technology improves switching speed and efficiency|
| **Operating temperature range** | -55°C ~ +150°C | Wide temperature range ensures stable operation|
---
Domain and module applications：
III. Applicable fields and application modules of NCE6990D-VB
1. **Power management**
NCE6990D-VB is a common switching element in **DC-DC converters** and **AC-DC power adapters**, which can efficiently convert voltage and minimize energy loss. Its 150A current carrying capacity enables it to support high-power loads and improve overall energy efficiency.
2. **Motor drive**
In **motor drive applications**, this MOSFET can be used to control the start and operation of DC motors or brushless motors, providing precise speed and torque control. Its fast switching performance and low conduction losses make it excellent in industrial automation and robotics.
3. **Energy storage system**
NCE6990D-VB is suitable for **battery management systems**, especially in the **lithium battery charging and discharging** process, which can achieve efficient current control. The device also plays an important role in the charging piles and energy storage systems of electric vehicles, ensuring the stable transmission and management of current.
4. **LED driver**
This MOSFET can be applied to **LED lighting driver circuits** to provide efficient current regulation and control. Due to its low RDS(ON) and high current carrying capacity, it can achieve efficient driving in high-power LED systems, improving lighting effects and reliability.
---
In summary, NCE6990D-VB is an ideal choice for multiple fields and modules due to its excellent current handling capability and low power consumption, especially in high-efficiency and high-current applications.
1. **Power management**
NCE6990D-VB is a common switching element in **DC-DC converters** and **AC-DC power adapters**, which can efficiently convert voltage and minimize energy loss. Its 150A current carrying capacity enables it to support high-power loads and improve overall energy efficiency.
2. **Motor drive**
In **motor drive applications**, this MOSFET can be used to control the start and operation of DC motors or brushless motors, providing precise speed and torque control. Its fast switching performance and low conduction losses make it excellent in industrial automation and robotics.
3. **Energy storage system**
NCE6990D-VB is suitable for **battery management systems**, especially in the **lithium battery charging and discharging** process, which can achieve efficient current control. The device also plays an important role in the charging piles and energy storage systems of electric vehicles, ensuring the stable transmission and management of current.
4. **LED driver**
This MOSFET can be applied to **LED lighting driver circuits** to provide efficient current regulation and control. Due to its low RDS(ON) and high current carrying capacity, it can achieve efficient driving in high-power LED systems, improving lighting effects and reliability.
---
In summary, NCE6990D-VB is an ideal choice for multiple fields and modules due to its excellent current handling capability and low power consumption, especially in high-efficiency and high-current applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
