NCE6890WD-VB Product details
Product introduction:
NCE6890WD-VB is a high-performance single N-channel MOSFET in a **TO-263** package, designed for high-current, high-efficiency applications. Its drain-source voltage (VDS) reaches **60V**, with a gate-source voltage (VGS) range of ±20V, which is suitable for the needs of a variety of power electronic circuits. The on-resistance (RDS(ON)) of NCE6890WD-VB is as low as **4mΩ@VGS=10V**, and it maintains extremely low heat loss at an on-current (ID) of **150A**, thereby significantly improving the energy efficiency of the overall system. The device uses **Trench technology** to optimize the conductive performance and is widely used in power management, inverters, and electric vehicles.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
| **Parameter** | **Specification** | **Description** |
|-----------------------|------------------------------|-----------------------------------------|
| **Package Type** | TO-263 | Surface mount package, suitable for high-density circuit design. |
| **Channel Configuration** | Single N-channel | Provides excellent switching performance and efficiency. |
| **Drain-Source Voltage (VDS)** | 60V | Suitable for power conversion in low to medium voltage applications. |
| **Gate-Source Voltage (VGS)** | ±20V | Provides a flexible gate drive voltage range. |
| **Threshold Voltage (Vth)** | 3V | Minimum voltage for gate turn-on. |
| **On-Resistance (RDS(ON))** | 4mΩ @ VGS=10V | Low conduction loss helps improve system efficiency. |
| **Drain Current (ID)** | 150A | Supports high current applications and meets stringent load requirements. |
| **Technology Type** | Trench | Adopts trench technology to optimize conductivity and reduce switching losses. |
| **Operating Temperature Range** | -55°C ~ 150°C | Can operate stably under extreme environmental conditions. |
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Domain and module applications:
1. **Switching Power Supplies**
NCE6890WD-VB can be used as the main switching element in switching power supplies. Its low on-resistance effectively reduces heat loss under high load conditions and improves overall energy efficiency.
2. **Electric Vehicle Drives**
This MOSFET is ideal for electric vehicle drive controllers, supporting currents up to **150A**, providing stable power to the motor, ensuring high efficiency and reliability.
3. **Inverters**
In photovoltaic and wind power inverters, NCE6890WD-VB can be used for DC to AC conversion. Its **60V** withstand voltage capability is suitable for a variety of renewable energy applications, and its fast switching performance can improve energy conversion efficiency.
4. **Industrial Automation**
This device is suitable for drive modules in industrial automation equipment, such as servo motor control. It can maintain stable performance at high currents, which helps improve production efficiency.
5. **Power Management ICs**
NCE6890WD-VB can be used in power management ICs to provide high-efficiency power switching and load driving, especially suitable for occasions requiring high efficiency and low thermal design.
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NCE6890WD-VB's high current carrying capacity, low on-resistance and excellent switching characteristics make it an ideal choice for a variety of high-performance fields such as switching power supplies, electric vehicles and industrial control.
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