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NCE6602A-VB Product details
Back to previous pageProduct introduction：
NCE6602A-VB is an integrated dual NP-channel MOSFET in a SOT23-6 package. Its drain-source voltage (VDS) range is ±20V, making it suitable for a variety of small power management applications. The device has a gate-source voltage (VGS) tolerance of ±20V, with excellent voltage resistance. The NCE6602A-VB has a turn-on voltage (Vth) of 1.0V and -1.2V, respectively, suitable for low-voltage drive applications. Its on-resistance (RDS(ON)) is 30mΩ / 79mΩ and 22mΩ / 55mΩ at a drive voltage of 4.5V and 10V, respectively, with excellent conductive performance. The device has a maximum continuous drain current of 5.5A (N channel) and 3.4A (P channel), suitable for a wide range of power management applications.
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## 2. NCE6602A-VB
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | 22/55mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 1.0/-1.2V | 5.5/3.4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P |
| **Parameter** | **Specification** | **Description** |
|-------------------------|------------------------------|------------------------------|
| **Package** | SOT23-6 | Small surface mount package|
| **Channel type** | Dual N+P channel | Suitable for high-efficiency circuit design|
| **Drain-source voltage (VDS)** | ±20V | Suitable for bipolar applications|
| **Gate-source voltage (VGS)** | ±20V | High-voltage gate design|
| **Turning point voltage (Vth)** | 1.0V / -1.2V | Suitable for low-voltage drive|
| **On-resistance (RDS(ON))** | 30mΩ / 79mΩ @ VGS=4.5V | N channel on-resistance|
| | 22mΩ / 55mΩ @ VGS=10V | P Channel on-resistance|
| **Maximum drain current (ID)** | 5.5A / 3.4A | N/P channel maximum continuous drain current|
| **Operating technology** | Trench | Low loss and high performance design|
| **Operating temperature range** | -55°C to +150°C | Wide temperature range, suitable for various environments|
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## III.
Domain and module applications：
Examples
1. **Power Management Module**
The NCE6602A-VB can be used in power management and voltage regulation circuits. Its low on-resistance and good thermal characteristics make it ideal for use in efficient DC-DC converters and power adapters.
2. **Consumer Electronics**
In smartphones, tablets, and other consumer electronics, the device can be used as a load switch or power path management element to ensure efficient power distribution and battery management.
3. **Electric Vehicle (EV) Charging System**
In the charging system of electric vehicles, the NCE6602A-VB can achieve efficient power conversion and provide reliable current control to support fast charging and high power output.
4. **LED Lighting Driver**
This MOSFET is suitable for use in LED lighting driver circuits, which can effectively control the LED current and ensure stable system operation while improving energy efficiency.
5. **Switching Power Supply (SMPS)**
In various switching power supply designs, NCE6602A-VB can be used as a switching element to achieve efficient energy conversion, especially in small and portable devices, where its compact SOT23-6 package is ideal.
The dual-channel design and excellent electrical performance of NCE6602A-VB make it an ideal choice for many electronic applications, providing efficient and reliable power solutions under a variety of conditions.
1. **Power Management Module**
The NCE6602A-VB can be used in power management and voltage regulation circuits. Its low on-resistance and good thermal characteristics make it ideal for use in efficient DC-DC converters and power adapters.
2. **Consumer Electronics**
In smartphones, tablets, and other consumer electronics, the device can be used as a load switch or power path management element to ensure efficient power distribution and battery management.
3. **Electric Vehicle (EV) Charging System**
In the charging system of electric vehicles, the NCE6602A-VB can achieve efficient power conversion and provide reliable current control to support fast charging and high power output.
4. **LED Lighting Driver**
This MOSFET is suitable for use in LED lighting driver circuits, which can effectively control the LED current and ensure stable system operation while improving energy efficiency.
5. **Switching Power Supply (SMPS)**
In various switching power supply designs, NCE6602A-VB can be used as a switching element to achieve efficient energy conversion, especially in small and portable devices, where its compact SOT23-6 package is ideal.
The dual-channel design and excellent electrical performance of NCE6602A-VB make it an ideal choice for many electronic applications, providing efficient and reliable power solutions under a variety of conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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