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NCE65T900I-VB Product details
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1. NCE65T900I-VB Product Introduction
NCE65T900I-VB is a single N-channel power MOSFET in a TO-251 package. Its withstand voltage V\(_{DS}\)** is 650V, and it can operate in a high-voltage environment. Its gate voltage (V\(_{GS}\))** range is ±30V, with a threshold voltage (V\(_{th}\))** of 3.5V. The R\(_{DS(ON)}\) of this product is **950mΩ** at V\(_{GS}\) = 10V, with low conduction loss and high reliability, supporting a maximum continuous current of **5A**. With the help of the Super-Junction multi-epitaxial process (SJ Multi-EPI), this MOSFET combines low on-resistance and high breakdown voltage characteristics, suitable for a variety of power conversion applications.
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NCE65T900I-VB is a single N-channel power MOSFET in a TO-251 package. Its withstand voltage V\(_{DS}\)** is 650V, and it can operate in a high-voltage environment. Its gate voltage (V\(_{GS}\))** range is ±30V, with a threshold voltage (V\(_{th}\))** of 3.5V. The R\(_{DS(ON)}\) of this product is **950mΩ** at V\(_{GS}\) = 10V, with low conduction loss and high reliability, supporting a maximum continuous current of **5A**. With the help of the Super-Junction multi-epitaxial process (SJ Multi-EPI), this MOSFET combines low on-resistance and high breakdown voltage characteristics, suitable for a variety of power conversion applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
II. NCE65T900I-VB Detailed Parameters
| **Parameter** | **Value** | **Description** |
|---------------------|-------------------------------|---------------------------------------|
| **Package** | TO-251 | Compact package for well-managed thermal environments|
| **Channel Type** | Single N-channel | Enhancement-mode MOSFET for switch control and power transmission|
| **V\(_{DS}\)** | 650V | Maximum Drain-Source Voltage|
| **V\(_{GS}\)** | ±30V | Gate-Source Voltage Range|
| **V\(_{th}\)** | 3.5V | Minimum Gate Turn-On Voltage|
| **R\(_{DS(ON)}\)** | 950mΩ (V\(_{GS}\)=10V) | Drain-source resistance at on-state|
| **I\(_D\)** | 5A | Maximum continuous drain current|
| **Technology** | SJ Multi-EPI | Superjunction technology for improved efficiency and reduced losses|
| **Operating temperature range** | -55°C to 150°C | Wide operating temperature range|
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| **Parameter** | **Value** | **Description** |
|---------------------|-------------------------------|---------------------------------------|
| **Package** | TO-251 | Compact package for well-managed thermal environments|
| **Channel Type** | Single N-channel | Enhancement-mode MOSFET for switch control and power transmission|
| **V\(_{DS}\)** | 650V | Maximum Drain-Source Voltage|
| **V\(_{GS}\)** | ±30V | Gate-Source Voltage Range|
| **V\(_{th}\)** | 3.5V | Minimum Gate Turn-On Voltage|
| **R\(_{DS(ON)}\)** | 950mΩ (V\(_{GS}\)=10V) | Drain-source resistance at on-state|
| **I\(_D\)** | 5A | Maximum continuous drain current|
| **Technology** | SJ Multi-EPI | Superjunction technology for improved efficiency and reduced losses|
| **Operating temperature range** | -55°C to 150°C | Wide operating temperature range|
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Domain and module applications：
3. Applicable fields and module application examples
1. **Industrial-grade power conversion module**
NCE65T900I-VB is suitable for **high-voltage DC-DC converters** and **AC-DC rectifier circuits**, such as power supply systems for industrial equipment. Its high withstand voltage of 650V makes it perform well in high-voltage transmission or bus voltage applications.
2. **Motor control and variable frequency drive (VFD)**
This MOSFET is commonly used as a switching device in the inverter module in the **motor controller**. It can achieve efficient energy transmission and dynamic switching in variable frequency drive or servo drive systems.
3. **New energy and photovoltaic inverter**
In photovoltaic power generation systems, NCE65T900I-VB can be used as a power switching element of **DC-AC inverter** to ensure inverter efficiency and thermal management performance. Its high withstand voltage and low on-resistance characteristics give it advantages in medium and high power photovoltaic systems.
4. **Switching Mode Power Supplies (SMPS)**
Suitable for **high-efficiency switching mode power supplies (Switch-Mode Power Supplies)**, especially PFC (power factor correction) modules in industrial, communication and server applications. The super junction structure of NCE65T900I-VB can effectively reduce switching losses and improve the efficiency of the power system.
5. **Electric Vehicle Charging Station and Energy Storage System**
In electric vehicle charging stations and lithium battery energy storage systems, this device can be used in **DC fast charging modules** to support power conversion with high voltage and high reliability requirements.
As a high-voltage, high-efficiency and durable MOSFET, NCE65T900I-VB is widely used in industrial, energy and power electronics fields, especially in demanding environments.
1. **Industrial-grade power conversion module**
NCE65T900I-VB is suitable for **high-voltage DC-DC converters** and **AC-DC rectifier circuits**, such as power supply systems for industrial equipment. Its high withstand voltage of 650V makes it perform well in high-voltage transmission or bus voltage applications.
2. **Motor control and variable frequency drive (VFD)**
This MOSFET is commonly used as a switching device in the inverter module in the **motor controller**. It can achieve efficient energy transmission and dynamic switching in variable frequency drive or servo drive systems.
3. **New energy and photovoltaic inverter**
In photovoltaic power generation systems, NCE65T900I-VB can be used as a power switching element of **DC-AC inverter** to ensure inverter efficiency and thermal management performance. Its high withstand voltage and low on-resistance characteristics give it advantages in medium and high power photovoltaic systems.
4. **Switching Mode Power Supplies (SMPS)**
Suitable for **high-efficiency switching mode power supplies (Switch-Mode Power Supplies)**, especially PFC (power factor correction) modules in industrial, communication and server applications. The super junction structure of NCE65T900I-VB can effectively reduce switching losses and improve the efficiency of the power system.
5. **Electric Vehicle Charging Station and Energy Storage System**
In electric vehicle charging stations and lithium battery energy storage systems, this device can be used in **DC fast charging modules** to support power conversion with high voltage and high reliability requirements.
As a high-voltage, high-efficiency and durable MOSFET, NCE65T900I-VB is widely used in industrial, energy and power electronics fields, especially in demanding environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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