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NCE65T900F-VB Product details
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1. NCE65T900F-VB Product Introduction
NCE65T900F-VB is a high voltage single N-channel MOSFET in TO220F package with good switching performance and high reliability. The product supports a maximum drain-source voltage (V\(_{DS}\)) of 650V and a gate voltage (V\(_{GS}\)) of ±30V, making it suitable for applications such as high-voltage switching and power conversion. The MOSFET's 6A continuous current capability combined with planar process technology can ensure stable on-resistance performance while reducing costs. Suitable for power control and various high-voltage switching scenarios.
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NCE65T900F-VB is a high voltage single N-channel MOSFET in TO220F package with good switching performance and high reliability. The product supports a maximum drain-source voltage (V\(_{DS}\)) of 650V and a gate voltage (V\(_{GS}\)) of ±30V, making it suitable for applications such as high-voltage switching and power conversion. The MOSFET's 6A continuous current capability combined with planar process technology can ensure stable on-resistance performance while reducing costs. Suitable for power control and various high-voltage switching scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 6A | 840mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 6A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 6A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
II. NCE65T900F-VB Parameter Description
| **Parameter** | **Value** | **Description** |
|----------------------|---------------------------------|----------------------------------------|
| **Package Type** | TO220F | Provides excellent heat dissipation and mechanical strength|
| **Channel Type** | Single N-channel | Single channel structure for current control|
| **Drain-source voltage V\(_{DS}\)**| 650V | Supports high voltage application scenarios|
| **Gate-source voltage V\(_{GS}\)**| ±30V | Gate control voltage range, enhanced anti-interference ability|
| **Threshold voltage V\(_{th}\)**| 3.5V | Minimum gate voltage for the device to start conducting|
| **On-resistance R\(_{DS(on)}\)**| 1050mΩ @ V\(_{GS}\)=4.5V | On-resistance at low gate voltage|
| | 840mΩ @ V\(_{GS}\)=10V | Further reduction of on-resistance at higher gate voltage|
| **Drain current I\(_D\)** | 6A | Maximum continuous operating current|
| **Process technology** | Planar | Good stability, suitable for high-power and high-voltage applications|
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| **Parameter** | **Value** | **Description** |
|----------------------|---------------------------------|----------------------------------------|
| **Package Type** | TO220F | Provides excellent heat dissipation and mechanical strength|
| **Channel Type** | Single N-channel | Single channel structure for current control|
| **Drain-source voltage V\(_{DS}\)**| 650V | Supports high voltage application scenarios|
| **Gate-source voltage V\(_{GS}\)**| ±30V | Gate control voltage range, enhanced anti-interference ability|
| **Threshold voltage V\(_{th}\)**| 3.5V | Minimum gate voltage for the device to start conducting|
| **On-resistance R\(_{DS(on)}\)**| 1050mΩ @ V\(_{GS}\)=4.5V | On-resistance at low gate voltage|
| | 840mΩ @ V\(_{GS}\)=10V | Further reduction of on-resistance at higher gate voltage|
| **Drain current I\(_D\)** | 6A | Maximum continuous operating current|
| **Process technology** | Planar | Good stability, suitable for high-power and high-voltage applications|
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Domain and module applications：
3. Application fields and module examples
1. **Power conversion equipment**
NCE65T900F-VB is suitable for AC-DC or DC-DC conversion modules to achieve efficient power conversion. For example, its advantages of low conduction loss and high reliability can be brought into play in high-voltage equipment such as power adapters, industrial power supplies, and LED drive circuits.
2. **Lighting and drive systems**
In LED lamp drivers and street lighting control systems, due to the high voltage characteristics and good heat dissipation performance of MOSFET, it can effectively control switches under high voltage loads, reduce system energy consumption and extend equipment life.
3. **Motor control module**
This MOSFET is suitable for small motor drive modules, such as control circuits for fans and power tools. In these applications, its fast switching capability and high voltage withstand characteristics can achieve precise power control and improve system efficiency.
4. **Battery Management System (BMS)**
In lithium battery protection and management systems, this MOSFET can be used for high-voltage switch control and current limiting to ensure the safety of the battery pack. Its TO220F package provides good heat dissipation and is suitable for applications in electric vehicles and energy storage systems.
5. **Inverter and Uninterruptible Power Supply (UPS)**
In UPS systems and solar inverters, NCE65T900F-VB can be used to achieve high-voltage switching and power conversion. Such applications usually require devices with high voltage tolerance and low conduction loss to improve the conversion efficiency of the system.
In summary, NCE65T900F-VB is widely used in various types of high-voltage power conversion, control systems and energy management modules due to its high withstand voltage, low on-resistance and stable switching performance.
1. **Power conversion equipment**
NCE65T900F-VB is suitable for AC-DC or DC-DC conversion modules to achieve efficient power conversion. For example, its advantages of low conduction loss and high reliability can be brought into play in high-voltage equipment such as power adapters, industrial power supplies, and LED drive circuits.
2. **Lighting and drive systems**
In LED lamp drivers and street lighting control systems, due to the high voltage characteristics and good heat dissipation performance of MOSFET, it can effectively control switches under high voltage loads, reduce system energy consumption and extend equipment life.
3. **Motor control module**
This MOSFET is suitable for small motor drive modules, such as control circuits for fans and power tools. In these applications, its fast switching capability and high voltage withstand characteristics can achieve precise power control and improve system efficiency.
4. **Battery Management System (BMS)**
In lithium battery protection and management systems, this MOSFET can be used for high-voltage switch control and current limiting to ensure the safety of the battery pack. Its TO220F package provides good heat dissipation and is suitable for applications in electric vehicles and energy storage systems.
5. **Inverter and Uninterruptible Power Supply (UPS)**
In UPS systems and solar inverters, NCE65T900F-VB can be used to achieve high-voltage switching and power conversion. Such applications usually require devices with high voltage tolerance and low conduction loss to improve the conversion efficiency of the system.
In summary, NCE65T900F-VB is widely used in various types of high-voltage power conversion, control systems and energy management modules due to its high withstand voltage, low on-resistance and stable switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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