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NCE65T680-VB Product details

Product introduction:

1. NCE65T680-VB Product Introduction
NCE65T680-VB is a single N-channel MOSFET packaged in TO220, suitable for high-voltage, high-efficiency power conversion and switching circuits. Its main features are a withstand voltage of up to 650V, and the use of super junction (SJ) and multi-epitaxy (Multi-EPI) technology to ensure low conduction loss and high switching speed. At the same time, its gate drive voltage (VGS) can reach ±30V, with good noise resistance, suitable for stable operation in harsh environments.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 650V 3.5V 7A 700mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 650V 3.5V 7A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 650V 3.5V 7A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
II. NCE65T680-VB Parameter Description
| **Parameter** | **Value** | **Description** |
|---------------------|-------------------------------|----------------------------------------------|
| **Package Type** | TO220 | Standard high current power package, convenient for heat dissipation management. |
| **Configuration** | Single N-channel | Suitable for high voltage switching circuits and power modules. |
| **Drain-Source Voltage (VDS)** | 650V | Supports high voltage applications, widely used in industrial power supplies and inverters. |
| **Gate Drive Voltage (VGS)** | ±30V | High drive voltage capability, suitable for complex circuit environments. |
| **Threshold Voltage (Vth)** | 3.5V | Minimum gate voltage required for turn-on. |
| **On-resistance (RDS(ON))** | 700mΩ @ VGS=10V | Maintains low conduction loss under full load. |
| **Maximum drain current (ID)** | 7A | Can carry medium current load, suitable for medium power application scenarios. |
| **Technology** | SJ_Multi-EPI | Improve efficiency and reduce losses, suitable for high-frequency switching circuits. |

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Domain and module applications:

III. Application fields and module examples
1. **Electric vehicle charging module**
The 650V high withstand voltage characteristics of NCE65T680-VB, combined with its low on-resistance and high current capability, make it very suitable for use in the switching circuit of electric vehicle charging stations. This device can maintain high efficiency in a high-frequency environment, ensuring stable operation of the system.

2. **Solar inverter**
In a solar power generation system, DC power needs to be converted into AC power. NCE65T680-VB can be used in the main switch module of the inverter, providing high efficiency with its SJ technology and reducing heat loss during power conversion.

3. **Switching mode power supply (SMPS)**
In the switching mode power supply (SMPS) of server power supplies or communication equipment, this MOSFET supports high-frequency operation, which can effectively reduce losses and improve the overall power density of the system.

4. **Industrial control system**
Suitable for motor control and drive circuits in the industrial field. Its high voltage and reliability characteristics ensure that the system remains stable under high power and long-term working conditions.

NCE65T680-VB is particularly suitable for high-frequency, high-efficiency industrial and new energy applications due to its excellent switching performance and voltage resistance, covering automotive, power management and renewable energy systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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