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NCE65T680I-VB Product details
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1. NCE65T680I-VB Product Introduction
NCE65T680I-VB is a **single N-channel power MOSFET**, using **TO-251 package**, designed for high voltage applications, with **650V drain-source voltage (V_DS)** and ±30V gate-source voltage (V_GS) tolerance. It utilizes **Super Junction (SJ) and multi-layer EPI technology** to achieve lower on-resistance and higher efficiency. This makes it very suitable for systems that require high power density and high efficiency, such as power conversion and motor control.
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NCE65T680I-VB is a **single N-channel power MOSFET**, using **TO-251 package**, designed for high voltage applications, with **650V drain-source voltage (V_DS)** and ±30V gate-source voltage (V_GS) tolerance. It utilizes **Super Junction (SJ) and multi-layer EPI technology** to achieve lower on-resistance and higher efficiency. This makes it very suitable for systems that require high power density and high efficiency, such as power conversion and motor control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 11A | 370mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
II. NCE65T680I-VB Parameter Description
| **Parameter** | **Value** | **Description** |
|-----------------------|------------------------|--------------------------------|
| **Package** | TO-251 | Small size package with good heat dissipation capability|
| **Channel type** | Single N-channel | Suitable for high-efficiency switching circuits|
| **Drain-source voltage (V_DS)** | 650V | Supports high voltage applications|
| **Gate-source voltage (V_GS)** | ±30V | High voltage tolerance for complex control signals|
| **Turning voltage (V_th)** | 3.5V | Threshold voltage required for gate turn-on|
| **On-resistance (R_DS(ON))** | 370mΩ @ V_GS=10V | Typical on-resistance at 10V gate drive|
| **Maximum drain current (I_D)** | 11A | Maximum current capability|
| **Technology** | SJ_Multi-EPI | Technology to improve voltage capability and efficiency|
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| **Parameter** | **Value** | **Description** |
|-----------------------|------------------------|--------------------------------|
| **Package** | TO-251 | Small size package with good heat dissipation capability|
| **Channel type** | Single N-channel | Suitable for high-efficiency switching circuits|
| **Drain-source voltage (V_DS)** | 650V | Supports high voltage applications|
| **Gate-source voltage (V_GS)** | ±30V | High voltage tolerance for complex control signals|
| **Turning voltage (V_th)** | 3.5V | Threshold voltage required for gate turn-on|
| **On-resistance (R_DS(ON))** | 370mΩ @ V_GS=10V | Typical on-resistance at 10V gate drive|
| **Maximum drain current (I_D)** | 11A | Maximum current capability|
| **Technology** | SJ_Multi-EPI | Technology to improve voltage capability and efficiency|
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Domain and module applications：
III. Application fields and module examples
1. **Power conversion (switching power supply SMPS and PFC circuits)**
- Due to its high voltage characteristics and low on-resistance, the NCE65T680I-VB performs well in **server power supplies, data center UPS and industrial power supplies** to improve power factor and conversion efficiency.
- In PFC (power factor correction) circuits, it can achieve high-frequency switching with lower losses.
2. **Motor control and drive**
- Suitable for **industrial-grade motor drives** such as variable frequency drives (VFD) and servo motor control. Its high voltage and high current capabilities enable it to handle the high power requirements of industrial motors when starting and running.
3. **Renewable energy systems (solar inverters, energy storage systems)**
- In photovoltaic (PV) inverters and wind energy conversion systems, the NCE65T680I-VB can handle the higher voltage stress during the inversion process while maintaining low power losses.
- In energy storage systems (such as battery management modules BMS), the high-voltage resistance of MOSFET ensures safe charging and discharging of battery packs.
4. **Lighting equipment (LED drive circuit)**
- In LED lighting systems, especially **outdoor lighting and high-power LED drivers**, NCE65T680I-VB provides efficient power conversion and supports more complex dimming functions.
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This MOSFET is ideal for high-voltage, high-efficiency applications. Its TO-251 package provides good heat dissipation and is suitable for industrial control, renewable energy, power management and other fields.
1. **Power conversion (switching power supply SMPS and PFC circuits)**
- Due to its high voltage characteristics and low on-resistance, the NCE65T680I-VB performs well in **server power supplies, data center UPS and industrial power supplies** to improve power factor and conversion efficiency.
- In PFC (power factor correction) circuits, it can achieve high-frequency switching with lower losses.
2. **Motor control and drive**
- Suitable for **industrial-grade motor drives** such as variable frequency drives (VFD) and servo motor control. Its high voltage and high current capabilities enable it to handle the high power requirements of industrial motors when starting and running.
3. **Renewable energy systems (solar inverters, energy storage systems)**
- In photovoltaic (PV) inverters and wind energy conversion systems, the NCE65T680I-VB can handle the higher voltage stress during the inversion process while maintaining low power losses.
- In energy storage systems (such as battery management modules BMS), the high-voltage resistance of MOSFET ensures safe charging and discharging of battery packs.
4. **Lighting equipment (LED drive circuit)**
- In LED lighting systems, especially **outdoor lighting and high-power LED drivers**, NCE65T680I-VB provides efficient power conversion and supports more complex dimming functions.
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This MOSFET is ideal for high-voltage, high-efficiency applications. Its TO-251 package provides good heat dissipation and is suitable for industrial control, renewable energy, power management and other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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