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NCE65T680F-VB Product details
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1. NCE65T680F-VB Product Introduction
NCE65T680F-VB is a single-channel N-type power MOSFET in a **TO-220F** package, designed for high-voltage, high-efficiency applications. It has a **650V drain-source voltage (VDS)** and a gate voltage (VGS) of ±30V, and can maintain reliability under various harsh conditions. The device has an on-resistance (RDS(ON)) of **700mΩ@VGS = 10V**, and a maximum continuous drain current (ID) of **7A**.
Using **SJ_Multi-EPI (super junction multilayer epitaxial) technology**, it significantly reduces heat dissipation while reducing conduction losses, making it very suitable for circuit designs that require high-voltage conversion and switching performance.
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NCE65T680F-VB is a single-channel N-type power MOSFET in a **TO-220F** package, designed for high-voltage, high-efficiency applications. It has a **650V drain-source voltage (VDS)** and a gate voltage (VGS) of ±30V, and can maintain reliability under various harsh conditions. The device has an on-resistance (RDS(ON)) of **700mΩ@VGS = 10V**, and a maximum continuous drain current (ID) of **7A**.
Using **SJ_Multi-EPI (super junction multilayer epitaxial) technology**, it significantly reduces heat dissipation while reducing conduction losses, making it very suitable for circuit designs that require high-voltage conversion and switching performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
II. NCE65T680F-VB Parameter Description
| **Parameter Name** | **Parameter Value** | **Description** |
|----------------------|--------------------------|------------------------------------------|
| **Package** | TO-220F | Fully plastic package, providing high isolation and heat dissipation capabilities|
| **Configuration** | Single N channel (Single-N) | Commonly used in power switching circuits|
| **Drain-Source Voltage (VDS)** | 650V | Supports high voltage input, suitable for high power applications|
| **Gate-Source Voltage (VGS)** | ±30V | Provides a larger control voltage range to improve switching performance|
| **Turn-On Threshold Voltage (Vth)** | 3.5V | The gate needs to exceed this voltage to turn on|
| **On Resistance (RDS(ON))** | 700mΩ @ VGS = 10V | Smaller on-resistance reduces power loss|
| **Drain current (ID)** | 7A | Maximum supported current|
| **Technology** | SJ_Multi-EPI | Super junction technology reduces conduction loss and heat dissipation|
| **Operating temperature range** | -55°C ~ +150°C | Wide temperature range ensures stable operation|
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| **Parameter Name** | **Parameter Value** | **Description** |
|----------------------|--------------------------|------------------------------------------|
| **Package** | TO-220F | Fully plastic package, providing high isolation and heat dissipation capabilities|
| **Configuration** | Single N channel (Single-N) | Commonly used in power switching circuits|
| **Drain-Source Voltage (VDS)** | 650V | Supports high voltage input, suitable for high power applications|
| **Gate-Source Voltage (VGS)** | ±30V | Provides a larger control voltage range to improve switching performance|
| **Turn-On Threshold Voltage (Vth)** | 3.5V | The gate needs to exceed this voltage to turn on|
| **On Resistance (RDS(ON))** | 700mΩ @ VGS = 10V | Smaller on-resistance reduces power loss|
| **Drain current (ID)** | 7A | Maximum supported current|
| **Technology** | SJ_Multi-EPI | Super junction technology reduces conduction loss and heat dissipation|
| **Operating temperature range** | -55°C ~ +150°C | Wide temperature range ensures stable operation|
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Domain and module applications：
3. Applicable fields and application modules of NCE65T680F-VB
1. **Power conversion and inverter**
NCE65T680F-VB is commonly used in **high-voltage power conversion** (such as AC-DC or DC-DC converters), which can efficiently handle power conversion and reduce energy loss. In addition, in **solar inverters**, this MOSFET is also used as a high-voltage switching device to improve power conversion efficiency.
2. **Industrial automation and motor drive**
In the industrial field, this MOSFET can be used in **inverters** and **motor drives** to control the start, stop and speed regulation of high-power motors. Its 650V VDS enables it to cope with complex working conditions and high voltage shocks in industrial power grids.
3. **Battery Management and Energy Storage Systems**
In **energy storage systems**, the NCE65T680F-VB is used to implement battery charge and discharge control, ensuring efficient current management. For **electric vehicle charging piles** or high-voltage battery management modules, the device excels with its reliability and high-voltage resistance.
4. **Lighting Driver**
NCE65T680F-VB is suitable for **LED drive circuits**, especially LED systems that require high voltage. The device acts as a switching element in LED power supplies, providing constant current output and reducing power losses.
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The multi-layer epitaxial and super junction technology of this model MOSFET not only reduces power consumption, but also improves efficiency and stability, making it an ideal choice for **high-voltage switching** applications.
1. **Power conversion and inverter**
NCE65T680F-VB is commonly used in **high-voltage power conversion** (such as AC-DC or DC-DC converters), which can efficiently handle power conversion and reduce energy loss. In addition, in **solar inverters**, this MOSFET is also used as a high-voltage switching device to improve power conversion efficiency.
2. **Industrial automation and motor drive**
In the industrial field, this MOSFET can be used in **inverters** and **motor drives** to control the start, stop and speed regulation of high-power motors. Its 650V VDS enables it to cope with complex working conditions and high voltage shocks in industrial power grids.
3. **Battery Management and Energy Storage Systems**
In **energy storage systems**, the NCE65T680F-VB is used to implement battery charge and discharge control, ensuring efficient current management. For **electric vehicle charging piles** or high-voltage battery management modules, the device excels with its reliability and high-voltage resistance.
4. **Lighting Driver**
NCE65T680F-VB is suitable for **LED drive circuits**, especially LED systems that require high voltage. The device acts as a switching element in LED power supplies, providing constant current output and reducing power losses.
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The multi-layer epitaxial and super junction technology of this model MOSFET not only reduces power consumption, but also improves efficiency and stability, making it an ideal choice for **high-voltage switching** applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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