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NCE65T680D-VB Product details
Back to previous pageProduct introduction：
1. NCE65T680D-VB Product Introduction
NCE65T680D-VB is a single N-channel MOSFET in a **TO-263** package, designed for high-voltage, high-efficiency applications. The device has a drain-source voltage (VDS) of **650V** and a gate-source voltage (VGS) of ±30V, suitable for handling high-power and high-voltage environments. It adopts a **Super Junction (Super Junction) multi-epitaxial structure (SJ_Multi-EPI)**, which significantly reduces the on-resistance and switching losses, thereby improving energy efficiency. The maximum on-current (ID) can reach **7A**, combined with a low on-resistance of **700mΩ@VGS=10V**, it performs well in high-voltage power electronic systems.
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NCE65T680D-VB is a single N-channel MOSFET in a **TO-263** package, designed for high-voltage, high-efficiency applications. The device has a drain-source voltage (VDS) of **650V** and a gate-source voltage (VGS) of ±30V, suitable for handling high-power and high-voltage environments. It adopts a **Super Junction (Super Junction) multi-epitaxial structure (SJ_Multi-EPI)**, which significantly reduces the on-resistance and switching losses, thereby improving energy efficiency. The maximum on-current (ID) can reach **7A**, combined with a low on-resistance of **700mΩ@VGS=10V**, it performs well in high-voltage power electronic systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
II. NCE65T680D-VB Detailed Parameter Description
| **Parameter** | **Specification** | **Description** |
|-----------------------|------------------------------|-----------------------------------------|
| **Package Type** | TO-263 | Surface mount package, suitable for compact circuit design. |
| **Channel Configuration** | Single N-channel | Suitable for high-efficiency power switching. |
| **Drain-Source Voltage (VDS)** | 650V | Supports power conversion in high-voltage applications. |
| **Gate-Source Voltage (VGS)** | ±30V | Provides a wide voltage range to support a variety of drive circuits. |
| **Threshold Voltage (Vth)** | 3.5V | Indicates the minimum voltage at which the gate turns on. |
| **On-Resistance (RDS(ON))** | 700mΩ @ VGS=10V | Lower conduction loss, improved efficiency. |
| **Drain Current (ID)** | 7A | Capable of carrying medium current to meet various load requirements. |
| **Technology Type** | SJ_Multi-EPI | Super junction technology provides lower losses and higher energy efficiency. |
| **Operating Temperature Range** | -55°C ~ 150°C | Adapts to stable operation in harsh environments. |
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| **Parameter** | **Specification** | **Description** |
|-----------------------|------------------------------|-----------------------------------------|
| **Package Type** | TO-263 | Surface mount package, suitable for compact circuit design. |
| **Channel Configuration** | Single N-channel | Suitable for high-efficiency power switching. |
| **Drain-Source Voltage (VDS)** | 650V | Supports power conversion in high-voltage applications. |
| **Gate-Source Voltage (VGS)** | ±30V | Provides a wide voltage range to support a variety of drive circuits. |
| **Threshold Voltage (Vth)** | 3.5V | Indicates the minimum voltage at which the gate turns on. |
| **On-Resistance (RDS(ON))** | 700mΩ @ VGS=10V | Lower conduction loss, improved efficiency. |
| **Drain Current (ID)** | 7A | Capable of carrying medium current to meet various load requirements. |
| **Technology Type** | SJ_Multi-EPI | Super junction technology provides lower losses and higher energy efficiency. |
| **Operating Temperature Range** | -55°C ~ 150°C | Adapts to stable operation in harsh environments. |
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Domain and module applications：
III. Application fields and module examples of NCE65T680D-VB
1. **Solar Inverter**
NCE65T680D-VB can be used for high-voltage side switches in photovoltaic inverters. Its 650V withstand voltage characteristics and low conduction losses help improve the conversion efficiency of the inverter.
2. **Switching Power Supply (SMPS)**
Suitable for PFC (Power Factor Correction) circuits of high-power switching power supplies. The super junction technology of MOSFET ensures that the power supply has lower heat dissipation at higher switching frequencies.
3. **EV Charging Modules**
In DC fast charging stations, NCE65T680D-VB can be used for high-voltage conversion and voltage regulation modules. Its 650V withstand voltage value ensures stable power transmission.
4. **Industrial Inverters**
This device is widely used in high-voltage inverters in industrial automation systems for motor drive control. Its low loss characteristics improve system energy efficiency and reduce equipment heating.
5. **Smart Grid Equipment**
NCE65T680D-VB can be used for switch units and power routing equipment in smart grids, supporting stable operation in high-voltage and high-frequency environments.
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NCE65T680D-VB's high withstand voltage, low loss and super junction technology make it an ideal choice for demanding fields such as photovoltaics, automotive and industrial control.
1. **Solar Inverter**
NCE65T680D-VB can be used for high-voltage side switches in photovoltaic inverters. Its 650V withstand voltage characteristics and low conduction losses help improve the conversion efficiency of the inverter.
2. **Switching Power Supply (SMPS)**
Suitable for PFC (Power Factor Correction) circuits of high-power switching power supplies. The super junction technology of MOSFET ensures that the power supply has lower heat dissipation at higher switching frequencies.
3. **EV Charging Modules**
In DC fast charging stations, NCE65T680D-VB can be used for high-voltage conversion and voltage regulation modules. Its 650V withstand voltage value ensures stable power transmission.
4. **Industrial Inverters**
This device is widely used in high-voltage inverters in industrial automation systems for motor drive control. Its low loss characteristics improve system energy efficiency and reduce equipment heating.
5. **Smart Grid Equipment**
NCE65T680D-VB can be used for switch units and power routing equipment in smart grids, supporting stable operation in high-voltage and high-frequency environments.
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NCE65T680D-VB's high withstand voltage, low loss and super junction technology make it an ideal choice for demanding fields such as photovoltaics, automotive and industrial control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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