NCE65T540K-VB Product details
Product introduction:
NCE65T540K-VB is a **single N-channel MOSFET** in **TO-252 package**. The device has the characteristics of high withstand voltage and low on-resistance, suitable for high-voltage circuit applications. Its **VDS rating is 650V**, and its **VGS tolerance range is ±30V**, which can effectively control conduction and shutdown. With an on-resistance of **500mΩ@VGS=10V** and a maximum continuous current of **9A**, it performs well in situations where low loss and high energy efficiency are required. In addition, the device uses **SJ_Multi-EPI (super junction multi-epitaxial) technology** to optimize the conduction performance and withstand voltage capability, making it an ideal choice for industrial and power electronic equipment.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
| **Parameter** | **Description and value** |
|---------------------------|------------------------------------------|
| **Model** | NCE65T540K-VB |
| **Package** | TO-252 |
| **Channel type** | Single-N-Channel |
| **Maximum drain-source voltage (VDS)** | 650V |
| **Gate-source voltage (VGS)** | ±30V |
| **Threshold voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))** | 500mΩ (@VGS = 10V) |
| **Continuous drain current (ID)** | 9A |
| **Technology** | SJ_Multi-EPI (Superjunction Multi-Epitaxial Technology) |
| **Operating temperature range** | -55°C to +150°C |
| **Power consumption (Ptot)** | 78W |
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Domain and module applications:
1. **Solar Inverters**
In photovoltaic power generation systems, NCE65T540K-VB can be used for DC to AC inverter modules. Its high withstand voltage and low conduction loss help improve conversion efficiency and equipment reliability.
2. **EV Chargers**
The device supports high-voltage applications and is suitable for power conversion units in electric vehicle chargers. In high-voltage rectification and switching circuits, its low loss characteristics can reduce heat generation and increase the life of charging equipment.
3. **Switch Mode Power Supplies (SMPS)**
In industrial-grade power supply equipment and server power supplies, this MOSFET can efficiently handle high-power loads and reduce EMI interference, making it an ideal choice for PFC (power factor correction) modules.
4. **Industrial Motor Drives**
This device can provide stable switching characteristics in high-voltage motor control systems and is used in modules such as variable frequency drives (VFDs) to provide efficient energy management for industrial automation.
5. **Uninterruptible Power Supply (UPS Systems)**
In UPS systems, this MOSFET can be used in high-voltage bypass and battery management modules to ensure that critical loads switch smoothly when power is interrupted, improving system safety and reliability.
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The excellent voltage withstand capability, low conduction loss, and reliable switching characteristics of NCE65T540K-VB make it an ideal solution for various industrial, energy, and power conversion systems.
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