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NCE65T540I-VB Product details
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1. NCE65T540I-VB Product Introduction
NCE65T540I-VB is a single N-channel MOSFET in TO251 package. It has a drain-source voltage (VDS) of **650V** and a gate-source voltage (VGS) of **±30V**. With **SJ (super junction) multi-epitaxial technology**, the device has low on-resistance and high power handling capability, suitable for high-voltage scenarios. Its **threshold voltage (Vth)** is 3.5V, and it can provide up to **11A continuous current (ID)** at VGS=10V** with an on-resistance (RDS(ON)) of **370mΩ. This MOSFET performs well in high-frequency, high-power conversion applications and provides good thermal management and efficiency.
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NCE65T540I-VB is a single N-channel MOSFET in TO251 package. It has a drain-source voltage (VDS) of **650V** and a gate-source voltage (VGS) of **±30V**. With **SJ (super junction) multi-epitaxial technology**, the device has low on-resistance and high power handling capability, suitable for high-voltage scenarios. Its **threshold voltage (Vth)** is 3.5V, and it can provide up to **11A continuous current (ID)** at VGS=10V** with an on-resistance (RDS(ON)) of **370mΩ. This MOSFET performs well in high-frequency, high-power conversion applications and provides good thermal management and efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 11A | 370mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
II. NCE65T540I-VB Detailed Parameters
| Parameters| Description| Value|
|----------|---------------------------|---------------------------|
| **Package Type** | TO251 | Surface mount, compact design|
| **Configuration** | Single N-channel MOSFET | Suitable for single-channel control circuits|
| **Drain-source voltage (VDS)** | Maximum withstand voltage capability| 650V |
| **Gate-source voltage (VGS)** | Gate drive voltage range| ±30V |
| **Threshold voltage (Vth)** | Gate turn-on voltage| 3.5V |
| **On-resistance (RDS(ON))** | At VGS = 10V| 370mΩ |
| **Continuous drain current (ID)** | Maximum carrying current| 11A |
| **Technology type** | SJ Multi-EPI | Reduce loss and improve efficiency|
| **Application frequency** | Applicable to medium and high frequency switching circuits | Supports high efficiency conversion|
| **Operating temperature range** | Typical -55°C ~ +150°C | Wide temperature adaptability|
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| Parameters| Description| Value|
|----------|---------------------------|---------------------------|
| **Package Type** | TO251 | Surface mount, compact design|
| **Configuration** | Single N-channel MOSFET | Suitable for single-channel control circuits|
| **Drain-source voltage (VDS)** | Maximum withstand voltage capability| 650V |
| **Gate-source voltage (VGS)** | Gate drive voltage range| ±30V |
| **Threshold voltage (Vth)** | Gate turn-on voltage| 3.5V |
| **On-resistance (RDS(ON))** | At VGS = 10V| 370mΩ |
| **Continuous drain current (ID)** | Maximum carrying current| 11A |
| **Technology type** | SJ Multi-EPI | Reduce loss and improve efficiency|
| **Application frequency** | Applicable to medium and high frequency switching circuits | Supports high efficiency conversion|
| **Operating temperature range** | Typical -55°C ~ +150°C | Wide temperature adaptability|
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Domain and module applications：
III. Application fields and typical module examples
1. **Power management system**
- High voltage switch module for switch mode power supply (SMPS) and AC/DC converter.
- Serves as primary-side switch device in industrial and consumer power supplies, providing efficient conversion and stable output.
2. **Photovoltaic inverter and energy storage system**
- This MOSFET can be used in solar inverters and battery management systems (BMS), withstand high voltage and achieve fast switching.
- Multiple epitaxial technology ensures that the inverter has lower losses when operating at high frequencies, improving system efficiency.
3. **Motor control and variable frequency drive (VFD)**
- In industrial motor control and home appliance variable frequency drives, it is used to control current and voltage waveforms, supporting high reliability and high voltage resistance requirements.
4. **Lighting control system**
- Used in LED lighting drive circuits to achieve precise current control, improve power factor and reduce switching losses.
5. **Electric Vehicle and Charging Pile Module**
- Plays a key switch control role in high-voltage fast charging circuits, ensuring fast response and efficient power transmission.
- Can adapt to complex working conditions and support outdoor and extreme temperature environments.
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NCE65T540I-VB is a MOSFET with excellent comprehensive performance. With its high voltage, high current and low conduction loss characteristics, it is widely used in power electronics, industrial control, photovoltaics, energy storage and electric vehicle charging. Its SJ multi-epitaxial technology not only ensures efficient operation, but also improves the stability of the equipment in harsh environments.
1. **Power management system**
- High voltage switch module for switch mode power supply (SMPS) and AC/DC converter.
- Serves as primary-side switch device in industrial and consumer power supplies, providing efficient conversion and stable output.
2. **Photovoltaic inverter and energy storage system**
- This MOSFET can be used in solar inverters and battery management systems (BMS), withstand high voltage and achieve fast switching.
- Multiple epitaxial technology ensures that the inverter has lower losses when operating at high frequencies, improving system efficiency.
3. **Motor control and variable frequency drive (VFD)**
- In industrial motor control and home appliance variable frequency drives, it is used to control current and voltage waveforms, supporting high reliability and high voltage resistance requirements.
4. **Lighting control system**
- Used in LED lighting drive circuits to achieve precise current control, improve power factor and reduce switching losses.
5. **Electric Vehicle and Charging Pile Module**
- Plays a key switch control role in high-voltage fast charging circuits, ensuring fast response and efficient power transmission.
- Can adapt to complex working conditions and support outdoor and extreme temperature environments.
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NCE65T540I-VB is a MOSFET with excellent comprehensive performance. With its high voltage, high current and low conduction loss characteristics, it is widely used in power electronics, industrial control, photovoltaics, energy storage and electric vehicle charging. Its SJ multi-epitaxial technology not only ensures efficient operation, but also improves the stability of the equipment in harsh environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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