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NCE65T540F-VB Product details
Back to previous pageProduct introduction：
NCE65T540F-VB is a high-voltage single N-channel MOSFET in a TO220F package. With its **650V drain-source voltage (VDS)** and **30V gate-source limit voltage (VGS)**, the device is ideal for high-efficiency switching and power conversion applications. Its **SJ (super junction) multi-layer EPI technology** can effectively reduce the on-resistance, achieving higher switching efficiency and lower power consumption. The typical on-resistance (RDS(ON)) of this MOSFET is **550mΩ@VGS=10V**, and the maximum continuous drain current is **9A**, making it suitable for operation in a variety of high-voltage power applications.
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## 2. NCE65T540F-VB
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 9A | 550mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
| **Parameter** | **Specification** | **Description** |
|------------------------|--------------------------------|------------------------------|
| **Package** | TO220F | Insulated package, enhanced electrical isolation|
| **Channel type** | Single N-channel | Commonly used for high-voltage power switches|
| **Drain-source voltage (VDS)** | 650V | Suitable for high-voltage application scenarios|
| **Gate-source voltage (VGS)** | ±30V | High-voltage gate design, increased stability|
| **Turning voltage (Vth)** | 3.5V | Turn-on voltage required for gate|
| **On-resistance (RDS(ON))** | 550mΩ @ VGS=10V | Typical on-resistance, low conduction loss|
| **Maximum drain current (ID)** | 9A | Maximum current carrying capacity|
| **Working technology** | SJ_Multi-EPI (super junction technology) | High voltage and low loss design |
| **Operating temperature range** | -55°C to +150°C | Wide temperature range, suitable for harsh environments |
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## III.
Domain and module applications：
Examples
1. **Industrial Power Supplies and Inverters**
In power modules and inverters for industrial equipment, the NCE65T540F-VB can be used as a high-voltage switching device. Its 650V withstand voltage characteristics and low on-resistance are suitable for motor drives and power management modules in factory automation systems.
2. **Photovoltaic Inverters and Wind Power Generation Systems**
This MOSFET is commonly used in solar photovoltaic inverters and wind power generation systems. Its high voltage withstand capability ensures stable operation in extreme voltage fluctuation environments, and improves energy efficiency through super junction technology.
3. **Switching Power Supplies (SMPS)**
In switching power modules for servers, communication equipment, and consumer electronics, the NCE65T540F-VB can provide efficient power conversion. Its low on-resistance helps reduce power consumption, thereby improving the overall efficiency of the power supply.
4. **Electric Vehicle (EV) Charging Station and On-board Electronic Devices**
The device can be used in EV charging stations and high-voltage on-board circuits to ensure stable operation of charging equipment and improve current control efficiency.
5. **LED Lighting Driver Circuit**
In high-power LED driver circuits, NCE65T540F-VB acts as a high-voltage switch to effectively control power delivery and reduce energy loss in the circuit.
This MOSFET has demonstrated excellent performance in many fields through its high reliability and high efficiency, and is an ideal choice for applications such as industry, energy, and automotive.
1. **Industrial Power Supplies and Inverters**
In power modules and inverters for industrial equipment, the NCE65T540F-VB can be used as a high-voltage switching device. Its 650V withstand voltage characteristics and low on-resistance are suitable for motor drives and power management modules in factory automation systems.
2. **Photovoltaic Inverters and Wind Power Generation Systems**
This MOSFET is commonly used in solar photovoltaic inverters and wind power generation systems. Its high voltage withstand capability ensures stable operation in extreme voltage fluctuation environments, and improves energy efficiency through super junction technology.
3. **Switching Power Supplies (SMPS)**
In switching power modules for servers, communication equipment, and consumer electronics, the NCE65T540F-VB can provide efficient power conversion. Its low on-resistance helps reduce power consumption, thereby improving the overall efficiency of the power supply.
4. **Electric Vehicle (EV) Charging Station and On-board Electronic Devices**
The device can be used in EV charging stations and high-voltage on-board circuits to ensure stable operation of charging equipment and improve current control efficiency.
5. **LED Lighting Driver Circuit**
In high-power LED driver circuits, NCE65T540F-VB acts as a high-voltage switch to effectively control power delivery and reduce energy loss in the circuit.
This MOSFET has demonstrated excellent performance in many fields through its high reliability and high efficiency, and is an ideal choice for applications such as industry, energy, and automotive.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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