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NCE65T540D-VB Product details
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1. NCE65T540D-VB Product Introduction
NCE65T540D-VB is a high-voltage single N-channel MOSFET in a TO-263 package with excellent on-resistance and switching performance. With a drain-source voltage (V_DS) of 650V and a gate-source voltage (V_GS) of ±30V, the device can cope with a variety of high-voltage application scenarios. Its 500mΩ on-resistance (R_DS(ON)) ensures low losses, and with a continuous current (I_D) of 9A, it is suitable for energy-efficient power electronic systems. In addition, the NCE65T540D-VB uses **superjunction multi-EPI technology (SJ_Multi-EPI)**, which improves its conduction efficiency and avalanche resistance, especially in high-voltage inverters and power conversion systems.
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NCE65T540D-VB is a high-voltage single N-channel MOSFET in a TO-263 package with excellent on-resistance and switching performance. With a drain-source voltage (V_DS) of 650V and a gate-source voltage (V_GS) of ±30V, the device can cope with a variety of high-voltage application scenarios. Its 500mΩ on-resistance (R_DS(ON)) ensures low losses, and with a continuous current (I_D) of 9A, it is suitable for energy-efficient power electronic systems. In addition, the NCE65T540D-VB uses **superjunction multi-EPI technology (SJ_Multi-EPI)**, which improves its conduction efficiency and avalanche resistance, especially in high-voltage inverters and power conversion systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 9A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. NCE65T540D-VB Detailed parameter description
| **Parameter** | **Value** | **Unit** | **Description** |
|------------------------|------------------------|----------|-------------------------------------------|
| **Package type** | TO-263 | —— | Surface mount package, suitable for high current applications and environments with high heat dissipation requirements|
| **Configuration** | Single N-channel| —— | Standard N-channel MOSFET |
| **Drain-source voltage (V_DS)** | 650 | V | Maximum drain-source voltage, suitable for high voltage circuits|
| **Gate-source voltage (V_GS)** | ±30 | V | Gate voltage range to ensure safe operation|
| **Turning voltage (V_th)** | 3.5 | V | Gate turn-on voltage|
| **On-resistance (R_DS(ON))** | 500 | mΩ | At V_GS = 10V |
| **Continuous drain current (I_D)** | 9 | A | Maximum continuous drain current|
| **Technology** | Super junction multi-EPI technology| —— | Improve conduction efficiency and enhance avalanche resistance|
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| **Parameter** | **Value** | **Unit** | **Description** |
|------------------------|------------------------|----------|-------------------------------------------|
| **Package type** | TO-263 | —— | Surface mount package, suitable for high current applications and environments with high heat dissipation requirements|
| **Configuration** | Single N-channel| —— | Standard N-channel MOSFET |
| **Drain-source voltage (V_DS)** | 650 | V | Maximum drain-source voltage, suitable for high voltage circuits|
| **Gate-source voltage (V_GS)** | ±30 | V | Gate voltage range to ensure safe operation|
| **Turning voltage (V_th)** | 3.5 | V | Gate turn-on voltage|
| **On-resistance (R_DS(ON))** | 500 | mΩ | At V_GS = 10V |
| **Continuous drain current (I_D)** | 9 | A | Maximum continuous drain current|
| **Technology** | Super junction multi-EPI technology| —— | Improve conduction efficiency and enhance avalanche resistance|
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Domain and module applications：
III. Application fields and module examples
1. **Photovoltaic inverter**
In photovoltaic systems, NCE65T540D-VB can be used in the DC-AC conversion module in the inverter. Its high withstand voltage of 650V and low on-resistance can effectively reduce power loss and improve the overall energy efficiency of the system.
2. **Electric vehicle charging module**
In high-voltage charging equipment such as charging piles, this MOSFET can undertake high-voltage rectification and switching tasks to ensure low heat loss and high-efficiency energy conversion during charging.
3. **Switching power supply (SMPS)**
This device is suitable for the high-voltage stage part of industrial and consumer switching power supplies. With its 650V withstand voltage and multiple EPI technology, it can support long-term stable operation and improve system reliability.
4. **Uninterruptible Power System (UPS)**
In UPS systems, this MOSFET is used in inverter and battery switching circuit modules to ensure a smooth and seamless transition when switching power.
5. **Industrial Control and Motor Drive**
In industrial controllers and motor drive modules, NCE65T540D-VB provides stable high-voltage control capabilities, especially for current control when large motors are started.
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As a high-performance, high-reliability super-junction MOSFET, NCE65T540D-VB performs well in a variety of applications, especially those that require high voltage and high energy efficiency.
1. **Photovoltaic inverter**
In photovoltaic systems, NCE65T540D-VB can be used in the DC-AC conversion module in the inverter. Its high withstand voltage of 650V and low on-resistance can effectively reduce power loss and improve the overall energy efficiency of the system.
2. **Electric vehicle charging module**
In high-voltage charging equipment such as charging piles, this MOSFET can undertake high-voltage rectification and switching tasks to ensure low heat loss and high-efficiency energy conversion during charging.
3. **Switching power supply (SMPS)**
This device is suitable for the high-voltage stage part of industrial and consumer switching power supplies. With its 650V withstand voltage and multiple EPI technology, it can support long-term stable operation and improve system reliability.
4. **Uninterruptible Power System (UPS)**
In UPS systems, this MOSFET is used in inverter and battery switching circuit modules to ensure a smooth and seamless transition when switching power.
5. **Industrial Control and Motor Drive**
In industrial controllers and motor drive modules, NCE65T540D-VB provides stable high-voltage control capabilities, especially for current control when large motors are started.
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As a high-performance, high-reliability super-junction MOSFET, NCE65T540D-VB performs well in a variety of applications, especially those that require high voltage and high energy efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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