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NCE65T2K4K-VB Product details
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The following is the product introduction, detailed parameter description and application examples of the **NCE65T2K4K-VB** single N-channel MOSFET:
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### **1. Product Introduction**
NCE65T2K4K-VB is a high-voltage single N-channel MOSFET in a **TO252 package**, designed for high-voltage, low-power applications. The device has a **withstand voltage of up to 650V** and supports a **gate voltage (VGS) of **±30V**, suitable for power electronics and industrial control scenarios. Its **threshold voltage (Vth) is 3.5V**, ensuring fast turn-on in common control systems. The MOSFET has an on-resistance (RDS(ON)) of **2300mΩ** at **VGS = 10V** and supports a **maximum drain current (ID) of 2A**, which is very suitable for operation under light load and high voltage conditions.
Due to the use of **SJ (super junction) multi-epitaxial technology**, the device performs well in reducing conduction losses and improving energy efficiency, and is particularly suitable for application scenarios that require high voltage blocking capabilities but low current, such as power management and smart lighting systems.
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### **1. Product Introduction**
NCE65T2K4K-VB is a high-voltage single N-channel MOSFET in a **TO252 package**, designed for high-voltage, low-power applications. The device has a **withstand voltage of up to 650V** and supports a **gate voltage (VGS) of **±30V**, suitable for power electronics and industrial control scenarios. Its **threshold voltage (Vth) is 3.5V**, ensuring fast turn-on in common control systems. The MOSFET has an on-resistance (RDS(ON)) of **2300mΩ** at **VGS = 10V** and supports a **maximum drain current (ID) of 2A**, which is very suitable for operation under light load and high voltage conditions.
Due to the use of **SJ (super junction) multi-epitaxial technology**, the device performs well in reducing conduction losses and improving energy efficiency, and is particularly suitable for application scenarios that require high voltage blocking capabilities but low current, such as power management and smart lighting systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 2A | 2300mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
### **II. Detailed parameter description**
- **Model**: NCE65T2K4K-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain to source voltage (VDS)**: 650V
- **Gate to source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2300mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 2A
- **Technology**: SJ_Multi-EPI (Super Junction Multi-Epi)
- **Package advantages**: The TO252 package has the characteristics of compactness and low thermal resistance, and is suitable for circuits with space constraints.
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Domain and module applications：
**III. Application fields and module examples**
#### **1. Intelligent lighting control system**
NCE65T2K4K-VB is often used in LED lighting systems, especially high-voltage LED driver modules. Its 650V withstand voltage makes it reliable during long-term operation, while reducing power loss and improving system efficiency.
#### **2. Small switching power supply (SMPS)**
In small power modules and backup power supplies, this MOSFET can effectively improve the power conversion efficiency under light loads due to its low loss characteristics brought by super junction technology.
#### **3. Power isolation and standby circuits**
NCE65T2K4K-VB is suitable for high-voltage isolation circuits to ensure electrical isolation between the main circuit and the control circuit. It is also commonly used in standby circuits to help reduce the energy consumption of the power supply in the idle state.
#### **4. Industrial sensor modules**
In industrial automation, many sensor modules require high voltage isolation capability to protect the main circuit. The high voltage blocking capability of this MOSFET ensures the stability and anti-interference ability of the system.
#### **5. Smart home devices**
Smart devices such as electric curtains and electronic door locks often require high voltage tolerant MOSFETs for their control circuits to handle power load switching. NCE65T2K4K-VB is also widely used in such modules.
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With its high voltage withstand capability of 650V and the low loss characteristics of super junction technology, NCE65T2K4K-VB is an ideal choice for smart lighting, small switching power supplies and industrial control systems. Its TO252 package enables it to have excellent thermal management and stability performance in compact applications.
#### **1. Intelligent lighting control system**
NCE65T2K4K-VB is often used in LED lighting systems, especially high-voltage LED driver modules. Its 650V withstand voltage makes it reliable during long-term operation, while reducing power loss and improving system efficiency.
#### **2. Small switching power supply (SMPS)**
In small power modules and backup power supplies, this MOSFET can effectively improve the power conversion efficiency under light loads due to its low loss characteristics brought by super junction technology.
#### **3. Power isolation and standby circuits**
NCE65T2K4K-VB is suitable for high-voltage isolation circuits to ensure electrical isolation between the main circuit and the control circuit. It is also commonly used in standby circuits to help reduce the energy consumption of the power supply in the idle state.
#### **4. Industrial sensor modules**
In industrial automation, many sensor modules require high voltage isolation capability to protect the main circuit. The high voltage blocking capability of this MOSFET ensures the stability and anti-interference ability of the system.
#### **5. Smart home devices**
Smart devices such as electric curtains and electronic door locks often require high voltage tolerant MOSFETs for their control circuits to handle power load switching. NCE65T2K4K-VB is also widely used in such modules.
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With its high voltage withstand capability of 650V and the low loss characteristics of super junction technology, NCE65T2K4K-VB is an ideal choice for smart lighting, small switching power supplies and industrial control systems. Its TO252 package enables it to have excellent thermal management and stability performance in compact applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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