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NCE65T260T-VB Product details
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Product Introduction
NCE65T260T-VB is a high-voltage single N-channel MOSFET in a **TO247 package**, designed to handle high-power circuits and high-voltage applications. The device has a maximum drain-source voltage of **650V**, ensuring that it can handle reliable operation in high-voltage environments. Its on-resistance is **160mΩ (@VGS=10V)** and its maximum leakage current is **20A**, making it suitable for applications in industrial and energy systems. With **SJ_Multi-EPI** technology, this MOSFET offers lower conduction losses and high efficiency, making it particularly suitable for power conversion and power management modules.
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NCE65T260T-VB is a high-voltage single N-channel MOSFET in a **TO247 package**, designed to handle high-power circuits and high-voltage applications. The device has a maximum drain-source voltage of **650V**, ensuring that it can handle reliable operation in high-voltage environments. Its on-resistance is **160mΩ (@VGS=10V)** and its maximum leakage current is **20A**, making it suitable for applications in industrial and energy systems. With **SJ_Multi-EPI** technology, this MOSFET offers lower conduction losses and high efficiency, making it particularly suitable for power conversion and power management modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 160mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
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- **Package type**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 160mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
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Domain and module applications：
Applications and modules
**1. Power conversion equipment**
NCE65T260T-VB is suitable for **DC-DC converters** and **AC-DC rectifiers**, which can improve conversion efficiency in industrial and consumer-grade power modules. Its high voltage tolerance ensures stable operation in high-voltage power supply networks and reduces system losses.
**2. Solar and wind inverters**
In **photovoltaic inverters** and **wind power generation systems**, this MOSFET can reliably handle the power conversion process and reduce power losses, making renewable energy equipment more efficient and stable.
**3. Motor drives and industrial control systems**
NCE65T260T-VB is used in **industrial motor drives** to accurately control the starting and speed regulation of high-voltage motors, improving the efficiency and safety of motor systems. In **inverter** applications, the low on-resistance of the MOSFET improves the response speed and stability of the equipment.
**4. High-voltage power supply protection circuit**
This MOSFET can be used as a core component in **power switches** and **protection modules**, effectively protecting equipment and systems under overload and short-circuit conditions, ensuring the safety and durability of circuits.
**5. LED lighting system**
In **high-voltage LED lighting drivers**, NCE65T260T-VB can drive high-power LED lamps with lower losses, achieve brightness control and optimize energy consumption, while extending lamp life.
With its high reliability and excellent power consumption performance, NCE65T260T-VB has become an important choice in power electronic equipment and energy system applications.
**1. Power conversion equipment**
NCE65T260T-VB is suitable for **DC-DC converters** and **AC-DC rectifiers**, which can improve conversion efficiency in industrial and consumer-grade power modules. Its high voltage tolerance ensures stable operation in high-voltage power supply networks and reduces system losses.
**2. Solar and wind inverters**
In **photovoltaic inverters** and **wind power generation systems**, this MOSFET can reliably handle the power conversion process and reduce power losses, making renewable energy equipment more efficient and stable.
**3. Motor drives and industrial control systems**
NCE65T260T-VB is used in **industrial motor drives** to accurately control the starting and speed regulation of high-voltage motors, improving the efficiency and safety of motor systems. In **inverter** applications, the low on-resistance of the MOSFET improves the response speed and stability of the equipment.
**4. High-voltage power supply protection circuit**
This MOSFET can be used as a core component in **power switches** and **protection modules**, effectively protecting equipment and systems under overload and short-circuit conditions, ensuring the safety and durability of circuits.
**5. LED lighting system**
In **high-voltage LED lighting drivers**, NCE65T260T-VB can drive high-power LED lamps with lower losses, achieve brightness control and optimize energy consumption, while extending lamp life.
With its high reliability and excellent power consumption performance, NCE65T260T-VB has become an important choice in power electronic equipment and energy system applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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