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NCE65T260F-VB Product details

Product introduction:

1. Product Introduction
NCE65T260F-VB is a **single N-channel MOSFET**, which adopts **TO220F package** and is designed for high voltage application scenarios. It is suitable for circuits that require high power and high efficiency. Its drain-source voltage (VDS) can reach **650V**, the gate-source voltage (VGS) range is ±30V, and the threshold voltage (Vth) is 3.5V. The on-resistance (RDS(ON)) at a gate voltage of 10V is 160mΩ, supporting a continuous drain current of **20A**. NCE65T260F-VB adopts **SJ_Multi-EPI technology**, which greatly improves its conductivity and energy efficiency. It is widely used in switching power supplies, inverters and electric equipment.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 650V 3.5V 20A 160mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
2. Detailed parameter description
- **Model**: NCE65T260F-VB
- **Package**: TO220F (full plastic package, improve insulation and heat dissipation capabilities)
- **Configuration**: Single N channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI (super junction multi-epitaxial structure, improve efficiency and reduce loss)
- **Package type**: TO220F, full plastic package design provides higher durability and heat dissipation capabilities
- **Features**:
- High voltage withstand capability, suitable for 650V applications
- Low on-resistance, reducing power loss
- Suitable for high frequency switching circuits

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Domain and module applications:

III. Application fields and modules

1. **High-voltage switching power supply (SMPS)**
NCE65T260F-VB is widely used in high-voltage switching power supplies. It can effectively handle high input voltages of 650V, ensuring efficient and stable operation of power supply equipment when the load changes. It is often used in industrial power adapters and communication power systems.

2. **Photovoltaic inverter**
In the inverter module of the photovoltaic system, this MOSFET is used to convert DC power into AC power, supporting grid-connected or off-grid systems for solar power generation, with high energy efficiency and low loss.

3. **Electric vehicle charging piles**
Due to its high voltage tolerance and low on-resistance, this MOSFET plays an important role in electric vehicle charging piles, ensuring fast charging and efficient heat dissipation of the system, in line with the needs of modern green travel.

4. **Uninterruptible Power Supply (UPS)**
In UPS systems, NCE65T260F-VB provides stable power switching and management capabilities to ensure continuous power support for equipment during power outages and improve system reliability.

5. **Motor Drive Control System**
This MOSFET is suitable for various motor drive modules such as inverters and servo drives. It can accurately control the speed and torque of the motor and is commonly found in home appliances, power tools and industrial automation.

With its **high voltage tolerance, low on-resistance and multiple epitaxial technology**, NCE65T260F-VB is an ideal solution for various high-voltage applications and power electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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