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NCE65T1K9K-VB Product details
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The following is a product introduction, detailed parameter description, application areas and module examples of the **NCE65T1K9K-VB** MOSFET.
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### 1. Product Introduction
**NCE65T1K9K-VB** is a high-voltage **single N-channel MOSFET**, using **TO252 package**, suitable for various high-voltage applications. The device has a **drain-source voltage (VDS)** of up to **650V**, which can safely handle high-voltage switching operations and provide **6A maximum drain current (ID)**. Its **threshold voltage (Vth)** is **3.5V**, which is suitable for gate voltage control. The device adopts **planar (Plannar) technology** to ensure its stability in high-voltage operation. Although its **on-resistance (RDS(ON))** reaches **1220mΩ** at **VGS=10V**, it is suitable for medium and low frequency high-voltage control applications such as power conversion and intelligent switch control.
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### 1. Product Introduction
**NCE65T1K9K-VB** is a high-voltage **single N-channel MOSFET**, using **TO252 package**, suitable for various high-voltage applications. The device has a **drain-source voltage (VDS)** of up to **650V**, which can safely handle high-voltage switching operations and provide **6A maximum drain current (ID)**. Its **threshold voltage (Vth)** is **3.5V**, which is suitable for gate voltage control. The device adopts **planar (Plannar) technology** to ensure its stability in high-voltage operation. Although its **on-resistance (RDS(ON))** reaches **1220mΩ** at **VGS=10V**, it is suitable for medium and low frequency high-voltage control applications such as power conversion and intelligent switch control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 6A | 1220mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 6A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 6A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
### 2. Detailed parameter description
- **Model**: NCE65T1K9K-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON) (on-resistance)**:
- 976mΩ @ VGS = 4.5V
- 1220mΩ @ VGS = 10V
- **ID (maximum drain current)**: 6A
- **Technology**: Plannar technology
- **Package features**: TO252 package has good heat dissipation performance and compact appearance, suitable for high-power design.
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Domain and module applications：
### 3. Application fields and module examples
1. **Smart meter and power control**
**NCE65T1K9K-VB** can be used for **smart meter**, power management system and high-voltage relay drive. Its 650V withstand voltage capability enables it to operate reliably in a high-voltage grid environment, ensuring the stability and safety of the system.
2. **Electric vehicle charging pile**
This MOSFET performs well in the high-voltage switch of **electric vehicle charging pile** and can be used in the voltage regulation module in the DC fast charging circuit. Its high voltage characteristics and good heat dissipation performance make it suitable for long-term stable operation.
3. **LED drive system**
**NCE65T1K9K-VB** is suitable for **high-voltage LED lighting drivers**, such as for street lighting and building floodlights. Its high withstand voltage capability can effectively handle input voltage fluctuations and improve system reliability.
4. **Solar inverter**
In **photovoltaic system**, NCE65T1K9K-VB can be used as a high-voltage switching element in the inverter, responsible for converting DC power into AC power, adapting to the high-voltage environment of solar power generation equipment.
5. **Industrial control equipment**
This device is suitable for **industrial automation equipment** and high-voltage control systems, such as motor drives, switch modules, and protection circuits. Its excellent voltage resistance and reliable control performance ensure the stable operation of the equipment in complex industrial environments.
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### Summary
**NCE65T1K9K-VB** is a **650V N-channel MOSFET** using **planar technology**, with good heat dissipation capability and reliability. It is suitable for **smart grids, electric vehicle charging piles, LED drive systems, photovoltaic inverters** and other fields. The device's high withstand voltage characteristics and medium current capability make it ideal for high voltage applications, and it excels in scenarios requiring high reliability and stable performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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