NCE65T1K2K-VB Product details
Product introduction:
NCE65T1K2K-VB is a **single N-channel MOSFET**, using **TO252 package**, supporting high-voltage, high-reliability applications. The device has a **650V** drain-source voltage (VDS) and a ±30V gate-source voltage (VGS), and its turn-on threshold voltage (Vth) is **3.5V**. At **VGS = 10V**, its on-resistance (RDS(ON)) is **1000mΩ**, and the maximum drain current (ID) is **5A**. This MOSFET is based on **SJ_Multi-EPI technology** and exhibits excellent switching performance and high efficiency in high-voltage applications. The TO252 package ensures good heat dissipation, making it suitable for industrial equipment, power control and other fields.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
| **Parameter** | **Value** | **Description** |
|------------------------|---------------------------|----------------------------------|
| **Package type** | TO252 | Small surface mount package with good heat dissipation|
| **Configuration** | Single N-channel MOSFET | Single-channel switching device|
| **Drain-source voltage (VDS)** | 650V | Maximum voltage between drain and source|
| **Gate-source voltage (VGS)** | ±30V | Maximum voltage between gate and source|
| **Turn-on threshold voltage (Vth)** | 3.5V | Minimum voltage required to turn on the device|
| **On-resistance (RDS(ON))** | 1000mΩ (@VGS = 10V) | Resistance when on|
| **Maximum drain current (ID)** | 5A | Maximum sustainable current|
| **Technology** | SJ_Multi-EPI | Improves switching performance and efficiency of devices|
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Domain and module applications:
1. **Industrial Power Control System:**
NCE65T1K2K-VB is very suitable for **high voltage power management of industrial equipment**. It can be used in power conversion and power control modules in automation equipment and large machinery to ensure safe operation of equipment under high voltage conditions.
2. **Power Inverters:**
In renewable energy systems such as **photovoltaic inverters** and **wind inverters**, this device can effectively control energy conversion and improve the conversion efficiency of the overall system.
3. **Smart Meters & Distribution Systems:**
This MOSFET can be used in **smart meters** and **low voltage distribution systems** to help power companies optimize energy management and improve power supply efficiency.
4. **LED Lighting Drivers:**
NCE65T1K2K-VB can be used for **high-power LED driver**, especially in LED systems that require high-voltage power drive, to ensure the stability and life of lighting equipment.
5. **Electric Tools:**
This MOSFET is suitable for **power modules of electric tools**, providing stable power support and ensuring that the tools work safely under high loads.
6. **EV Chargers:**
In **EV Chargers**, this device can be used to control the switch of high-voltage power supply to ensure efficient and safe charging process.
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NCE65T1K2K-VB is a reliable **N-channel MOSFET**, suitable for occasions requiring high-voltage switch control. Its **SJ_Multi-EPI technology** provides excellent electrical performance, making it an excellent application value in fields such as energy conversion and industrial automation. The TO252 package ensures the compactness of the device and provides good heat dissipation performance, which is very suitable for the needs of modern power electronic equipment.
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