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NCE65T1K2I-VB Product details
Back to previous pageProduct introduction：
1. NCE65T1K2I-VB Product Introduction
NCE65T1K2I-VB is a **single N-channel MOSFET** in **TO251** package, with a drain-source voltage (V_DS) of up to **650V** and a gate-source voltage (V_GS) rating of ±30V. The threshold voltage (V_th) of the device is 3.5V, indicating that it can be turned on at a lower gate drive voltage. The on-resistance (R_DS(ON)) of NCE65T1K2I-VB is 950mΩ (V_GS=10V), and it can provide a drain current (I_D) of up to **5A**. Using **SJ_Multi-EPI** technology, it has low switching losses and excellent thermal stability, which is very suitable for high voltage application scenarios.
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NCE65T1K2I-VB is a **single N-channel MOSFET** in **TO251** package, with a drain-source voltage (V_DS) of up to **650V** and a gate-source voltage (V_GS) rating of ±30V. The threshold voltage (V_th) of the device is 3.5V, indicating that it can be turned on at a lower gate drive voltage. The on-resistance (R_DS(ON)) of NCE65T1K2I-VB is 950mΩ (V_GS=10V), and it can provide a drain current (I_D) of up to **5A**. Using **SJ_Multi-EPI** technology, it has low switching losses and excellent thermal stability, which is very suitable for high voltage application scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
II. Detailed parameter description
| **Parameter** | **Value** |
|---------------------|----------------------------|
| **Model** | NCE65T1K2I-VB |
| **Package** | TO251 |
| **Configuration** | Single N-channel|
| **Drain-source voltage (V_DS)** | 650V |
| **Gate-source voltage (V_GS)** | ±30V |
| **Threshold voltage (V_th)** | 3.5V |
| **On-resistance (R_DS(ON))** | 950mΩ (V_GS=10V) |
| **Drain current (I_D)** | 5A |
| **Technology** | SJ_Multi-EPI |
| **Operating temperature range** | -55°C to 150°C |
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| **Parameter** | **Value** |
|---------------------|----------------------------|
| **Model** | NCE65T1K2I-VB |
| **Package** | TO251 |
| **Configuration** | Single N-channel|
| **Drain-source voltage (V_DS)** | 650V |
| **Gate-source voltage (V_GS)** | ±30V |
| **Threshold voltage (V_th)** | 3.5V |
| **On-resistance (R_DS(ON))** | 950mΩ (V_GS=10V) |
| **Drain current (I_D)** | 5A |
| **Technology** | SJ_Multi-EPI |
| **Operating temperature range** | -55°C to 150°C |
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Domain and module applications：
III. Application fields and module examples
1. **LED lighting driver circuit**
NCE65T1K2I-VB is suitable for high-voltage driver modules for LED lighting. Due to its 650V withstand voltage, the device can handle grid input voltage and ensure stable operation of LED systems.
2. **Small household appliance power supply**
In small power supply modules of household appliances (such as microwave ovens and fans), this MOSFET can achieve efficient power conversion and reduce switching losses.
3. **Electricity meter and smart meter**
Smart power metering equipment often requires high-voltage management components. This MOSFET can be used in power management circuits to provide reliable switching functions to ensure long-term stable operation of instrument equipment.
4. **Grid monitoring and control equipment**
NCE65T1K2I-VB is very suitable for use in grid monitoring equipment, which needs to process high-voltage signals to ensure the power supply security and response speed of the monitoring module.
5. **Industrial Control Equipment**
High-voltage power supplies and relay drive circuits in industrial control modules often require stable high-voltage MOSFETs. The high withstand voltage and good conduction characteristics of NCE65T1K2I-VB make it an ideal choice for these applications.
The **SJ_Multi-EPI** technology of NCE65T1K2I-VB enables it to have lower switching losses and better thermal performance in high-voltage applications, which is very suitable for occasions requiring efficient conversion.
1. **LED lighting driver circuit**
NCE65T1K2I-VB is suitable for high-voltage driver modules for LED lighting. Due to its 650V withstand voltage, the device can handle grid input voltage and ensure stable operation of LED systems.
2. **Small household appliance power supply**
In small power supply modules of household appliances (such as microwave ovens and fans), this MOSFET can achieve efficient power conversion and reduce switching losses.
3. **Electricity meter and smart meter**
Smart power metering equipment often requires high-voltage management components. This MOSFET can be used in power management circuits to provide reliable switching functions to ensure long-term stable operation of instrument equipment.
4. **Grid monitoring and control equipment**
NCE65T1K2I-VB is very suitable for use in grid monitoring equipment, which needs to process high-voltage signals to ensure the power supply security and response speed of the monitoring module.
5. **Industrial Control Equipment**
High-voltage power supplies and relay drive circuits in industrial control modules often require stable high-voltage MOSFETs. The high withstand voltage and good conduction characteristics of NCE65T1K2I-VB make it an ideal choice for these applications.
The **SJ_Multi-EPI** technology of NCE65T1K2I-VB enables it to have lower switching losses and better thermal performance in high-voltage applications, which is very suitable for occasions requiring efficient conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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