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NCE65T1K2F-VB Product details

Product introduction:

The following is the product introduction, detailed parameter description and application examples of the **NCE65T1K2F-VB** single N-channel MOSFET:

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### **I. Product Introduction**
NCE65T1K2F-VB is a high-voltage single N-channel MOSFET in a TO220F package, designed for power management and high-voltage switching applications. Its **drain-source voltage (VDS) can reach 650V** and has a **gate voltage (VGS)** of ±30V, suitable for use in harsh power environments. The device's **threshold voltage (Vth) is 3.5V**, ensuring fast switching of the on state in conventional control circuits.
The NCE65T1K2F-VB has an on-resistance (RDS(ON)) of 840mΩ at **VGS = 10V** and supports a **maximum drain current (ID) of 6A**. Due to its **Plannar (planar) technology**, the device exhibits good reliability and stability under high temperature and high voltage conditions. It is ideal for high voltage power systems, motor control and power electronics applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 650V 3.5V 6A 840mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 650V 3.5V 6A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 650V 3.5V 6A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
**II. Detailed parameter description**
- **Model**: NCE65T1K2F-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain to source voltage (VDS)**: 650V
- **Gate to source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 1050mΩ @ VGS = 4.5V
- 840mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 6A
- **Technology**: Plannar
- **Package type advantages**: TO220F package has an insulating structure to ensure better electrical isolation and thermal management performance.

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Domain and module applications:

**III. Application fields and module examples**

**1. Switching power supply (SMPS)**
NCE65T1K2F-VB is suitable for high-voltage switching power supplies. It can work stably under high-frequency conditions and effectively reduce system energy consumption. It is often used in industrial control power supplies and server power supplies.

**2. Motor control system**
This MOSFET is suitable for high-voltage motor drive control, such as compressor and electric pump control circuits in household appliances. Its 650V withstand voltage ensures reliable operation of the motor and reduces the risk of failure.

**3. LED driver power supply**
Due to its high withstand voltage and low loss characteristics, NCE65T1K2F-VB is also suitable for LED lighting driver modules, especially in high-voltage LED lamps that need to run for a long time, improving system life and energy efficiency.

**4. Industrial inverters**
In industrial inverters, this MOSFET provides good voltage conversion capability, ensuring efficient DC-AC conversion, making it widely used in photovoltaic inverters in solar power generation systems.

**5. Power Factor Correction (PFC) Circuit**
NCE65T1K2F-VB can also be used in power factor correction modules to improve grid load efficiency, increase the power factor of the entire system, and reduce reactive power loss.

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With its high voltage capability, good insulation packaging and reliable current carrying capacity, NCE65T1K2F-VB is an ideal choice for various high-voltage power management and industrial control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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