NCE65T180T-VB Product details
Product introduction:
NCE65T180T-VB is a **single N-channel MOSFET** in **TO247 package**, designed for high-voltage, high-power applications. It supports **650V drain-source voltage (VDS)** and **±30V gate-source voltage (VGS)**, adapting to complex circuit control requirements. The **turn-on threshold voltage (Vth)** of this device is 3.5V, enabling fast response. Its on-resistance **RDS(ON)** is **160mΩ@VGS=10V**, providing efficient current control, and the maximum drain current (ID) reaches **20A**. With **super junction (SJ) Multi-EPI technology**, this MOSFET achieves lower losses and higher reliability, making it an ideal choice for efficient power systems and industrial equipment.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
| **Parameter** | **Value** | **Description** |
|------------------------|---------------------|-----------------------------|
| **Package type** | TO247 | High power package with optimized heat dissipation performance. |
| **Channel type** | Single N-channel | Efficient current conduction and switching control. |
| **Drain-source voltage (VDS)** | 650V | Suitable for high voltage application scenarios. |
| **Gate-source voltage (VGS)** | ±30V | Supports flexible gate drive. |
| **Turn-on threshold voltage (Vth)** | 3.5V | Ensures fast response and stable conduction. |
| **On-resistance (RDS(ON))** | 160mΩ @ VGS=10V | Provides low loss conduction performance. |
| **Maximum continuous drain current (ID)** | 20A | Meets high power load requirements. |
| **Technology** | SJ_Multi-EPI | Super junction technology improves electrical performance and energy efficiency. |
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Domain and module applications:
1. **Power electronics and power management**
- In **Photovoltaic inverters**, NCE65T180T-VB is used for high-voltage DC conversion to ensure efficient energy transmission output by solar panels.
- In **Uninterruptible power supply (UPS)** systems, it is used as a switching device to improve power switching efficiency and system stability.
2. **Industrial automation and control**
- In **Servo motor drive systems**, it is used to control the start and stop of high-power motors to improve the response speed and control accuracy of motors.
- In **Industrial power modules**, it realizes efficient energy management to ensure continuous operation and low power consumption of equipment.
3. **Home appliances and consumer electronics**
- In high-voltage home appliances such as **Induction cookers and microwave ovens**, MOSFET controls power output to ensure stable operation and energy efficiency optimization of equipment.
- In **air conditioning systems**, it is used to drive compressors and fan motors to improve equipment performance.
4. **Automotive electronics**
- In **on-board chargers (OBCs)** of **electric vehicles (EVs)**, NCE65T180T-VB enables safe and efficient operation of high-voltage charging systems.
- In **battery management systems (BMSs)**, it is used for high-voltage control of battery packs to ensure battery safety and service life.
The high-voltage characteristics and excellent current control capabilities of the NCE65T180T-VB make it an important component in **power systems, industrial automation, consumer electronics and automotive applications**. Through SJ_Multi-EPI technology, this MOSFET reduces energy consumption while ensuring system stability and long life performance, suitable for various scenarios requiring efficient power switches.
Technical support:
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