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NCE65R900K-VB Product details
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The following is a product introduction, detailed parameter description, application areas and module examples of the **NCE65R900K-VB** MOSFET.
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### 1. Product Introduction
**NCE65R900K-VB** is a high-voltage **single N-channel MOSFET**, using **TO252 package**, designed for high voltage and high-efficiency applications. The **drain-source voltage (VDS)** of this device can reach **650V**, and the maximum drain current (ID) is **5A**, which is very suitable for use in various industrial and power management applications. The **threshold voltage (Vth)** of NCE65R900K-VB is **3.5V**, which ensures that it turns on quickly at the appropriate gate-source voltage. Its on-resistance (RDS(ON))** at **VGS=10V is **1000mΩ**, which effectively reduces power consumption at high current. Using **SJ_Multi-EPI** technology, the NCE65R900K-VB provides excellent thermal performance and reliability, making it an ideal choice for high voltage switching applications.
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### 1. Product Introduction
**NCE65R900K-VB** is a high-voltage **single N-channel MOSFET**, using **TO252 package**, designed for high voltage and high-efficiency applications. The **drain-source voltage (VDS)** of this device can reach **650V**, and the maximum drain current (ID) is **5A**, which is very suitable for use in various industrial and power management applications. The **threshold voltage (Vth)** of NCE65R900K-VB is **3.5V**, which ensures that it turns on quickly at the appropriate gate-source voltage. Its on-resistance (RDS(ON))** at **VGS=10V is **1000mΩ**, which effectively reduces power consumption at high current. Using **SJ_Multi-EPI** technology, the NCE65R900K-VB provides excellent thermal performance and reliability, making it an ideal choice for high voltage switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
### 2. Detailed parameter description
- **Model**: NCE65R900K-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON) (on-resistance)**:
- 1000mΩ @ VGS = 10V
- **ID (maximum drain current)**: 5A
- **Technology**: SJ_Multi-EPI
- **Package type**: TO252, with good heat dissipation performance and space adaptability, suitable for various design requirements.
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Domain and module applications：
### III. Applications and module examples
1. **High-voltage power management**
NCE65R900K-VB is ideal for **high-voltage switching power supplies** and **DC-DC converters**. Its **650V withstand voltage capability** enables it to safely handle high-voltage inputs, improves the efficiency and stability of the power supply, and is widely used in scenarios such as industrial power supplies and communication power supplies.
2. **Motor control**
This MOSFET is suitable for **motor drives** and **servo motor control**. In high-voltage and high-current applications, NCE65R900K-VB can provide reliable switching performance, improve the efficiency and response speed of the motor, and is often used in automation equipment and robotics.
3. **LED drive**
NCE65R900K-VB is also suitable for **LED drive circuits**, especially in applications that require high voltage. Its low on-resistance can effectively reduce energy loss, thereby improving the energy efficiency of LED lighting systems, and is suitable for lighting and display applications.
4. **Photovoltaic inverter**
In **solar inverter**, NCE65R900K-VB can be used as an important component of high-voltage switches to convert the DC power generated by photovoltaic power generation into AC power to ensure the stability and high efficiency of the system.
5. **Power equipment and switchgear**
This device is suitable for **power control equipment**, such as high-voltage switches and relay drivers. NCE65R900K-VB can maintain stability and safety during high-voltage switching, and is suitable for power distribution and power management systems.
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### Summary
**NCE65R900K-VB** is a high-performance **650V N-channel MOSFET** with **TO252 package** and **SJ_Multi-EPI** technology, ensuring its reliability and stability in various high-power and high-voltage applications. It is suitable for **power management, motor control, LED drive, photovoltaic inverter** and other fields, meeting the needs of modern electronic equipment for high performance and high efficiency. The design of this device not only reduces energy loss, but also maintains excellent performance in harsh environments, making it an ideal choice for high-voltage electronic applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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