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NCE65R900I-VB Product details
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NCE65R900I-VB Product Introduction
NCE65R900I-VB is a **650V N-Channel MOSFET** in a **TO251 package**, designed for high voltage and medium current applications. This MOSFET can withstand drain-source voltage (VDS) up to **650V** and supports gate-source voltage (VGS) of **±30V**, making it excel in demanding power management and switching applications. The threshold voltage (Vth) is **3.5V**, and the on-resistance (RDS(ON)) is only **950mΩ** at **VGS=10V**, enabling low power consumption and high efficiency. NCE65R900I-VB utilizes **SJ_Multi-EPI technology** to provide better switching performance and reliability, making it ideal for applications that require high efficiency and stable performance.
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NCE65R900I-VB is a **650V N-Channel MOSFET** in a **TO251 package**, designed for high voltage and medium current applications. This MOSFET can withstand drain-source voltage (VDS) up to **650V** and supports gate-source voltage (VGS) of **±30V**, making it excel in demanding power management and switching applications. The threshold voltage (Vth) is **3.5V**, and the on-resistance (RDS(ON)) is only **950mΩ** at **VGS=10V**, enabling low power consumption and high efficiency. NCE65R900I-VB utilizes **SJ_Multi-EPI technology** to provide better switching performance and reliability, making it ideal for applications that require high efficiency and stable performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Model**: NCE65R900I-VB
- **Package**: TO251
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 950mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
- **Operating temperature range**: -55°C ~ 150°C
- **Package features**: TO251 package design provides good heat dissipation performance, suitable for high power density applications.
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- **Model**: NCE65R900I-VB
- **Package**: TO251
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 950mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
- **Operating temperature range**: -55°C ~ 150°C
- **Package features**: TO251 package design provides good heat dissipation performance, suitable for high power density applications.
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Domain and module applications：
Application fields and module examples
The high voltage and low conduction loss characteristics of NCE65R900I-VB make it widely applicable to multiple fields and modules, including:
1. **Switching Power Supply (SMPS)**: This MOSFET can be used as the main switching element in the switching power supply, which can convert voltage at high efficiency and reduce system energy consumption. It is suitable for various power adapters and chargers.
2. **Motor Drive**: In the motor control circuit, NCE65R900I-VB can be used to drive DC motors, stepper motors or brushless DC motors (BLDC), improve motor starting and operation efficiency, and is widely used in industrial control and consumer electronics.
3. **LED Drive**: NCE65R900I-VB is suitable for efficient LED drive circuits. Through its low RDS(ON) characteristics, it helps manage current and improve the overall energy efficiency and stability of LED lighting systems.
4. **Inverters and Rectifiers**: In power electronics applications such as photovoltaic inverters and power rectifiers, the NCE65R900I-VB can be used as a high-voltage switch to support efficient energy conversion and transmission.
5. **Power Management Module**: In the power management of various electronic devices, this MOSFET can be used for load switching and power monitoring to ensure stable operation of the equipment and prevent overload and short-circuit faults.
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NCE65R900I-VB is an ideal choice for high-voltage applications with its **high withstand voltage** and **low conduction loss** characteristics. Its **TO251 package** not only provides excellent heat dissipation performance, but is also suitable for a variety of high-efficiency and high-power density electronic devices and modules, meeting the high performance and reliability requirements of modern electronic technology.
The high voltage and low conduction loss characteristics of NCE65R900I-VB make it widely applicable to multiple fields and modules, including:
1. **Switching Power Supply (SMPS)**: This MOSFET can be used as the main switching element in the switching power supply, which can convert voltage at high efficiency and reduce system energy consumption. It is suitable for various power adapters and chargers.
2. **Motor Drive**: In the motor control circuit, NCE65R900I-VB can be used to drive DC motors, stepper motors or brushless DC motors (BLDC), improve motor starting and operation efficiency, and is widely used in industrial control and consumer electronics.
3. **LED Drive**: NCE65R900I-VB is suitable for efficient LED drive circuits. Through its low RDS(ON) characteristics, it helps manage current and improve the overall energy efficiency and stability of LED lighting systems.
4. **Inverters and Rectifiers**: In power electronics applications such as photovoltaic inverters and power rectifiers, the NCE65R900I-VB can be used as a high-voltage switch to support efficient energy conversion and transmission.
5. **Power Management Module**: In the power management of various electronic devices, this MOSFET can be used for load switching and power monitoring to ensure stable operation of the equipment and prevent overload and short-circuit faults.
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NCE65R900I-VB is an ideal choice for high-voltage applications with its **high withstand voltage** and **low conduction loss** characteristics. Its **TO251 package** not only provides excellent heat dissipation performance, but is also suitable for a variety of high-efficiency and high-power density electronic devices and modules, meeting the high performance and reliability requirements of modern electronic technology.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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