NCE65R540K-VB Product details
Product introduction:
NCE65R540K-VB is a high-voltage single N-channel MOSFET in a **TO252** package, designed for high-voltage power electronics applications. The device can withstand drain-source voltages (V_DS) up to **650V** and supports gate-source voltages (V_GS) of ±30V. Its threshold voltage (V_th) is 3.5V, and it can be turned on quickly under appropriate gate voltage. NCE65R540K-VB has an on-resistance (R_DS(ON)) of 500mΩ at V_GS=10V, which is relatively high, but can still effectively meet performance requirements in specific applications. The maximum drain current (I_D) is **9A**, and it uses **SJ_Multi-EPI** technology to provide excellent switching performance and thermal stability, suitable for high-voltage and high-efficiency application scenarios.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
| **Parameter** | **Value** |
|--------------------|-----------------------------|
| **Model** | NCE65R540K-VB |
| **Package** | TO252 |
| **Configuration** | Single N-channel|
| **Drain-source voltage (V_DS)** | 650V |
| **Gate-source voltage (V_GS)** | ±30V |
| **Threshold voltage (V_th)** | 3.5V |
| **On-resistance (R_DS(ON))** | 500mΩ(V_GS=10V) |
| **Drain current (I_D)** | 9A |
| **Technology** | SJ_Multi-EPI |
| **Operating temperature range** | -55°C to 150°C |
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Domain and module applications:
1. **Power converter**
NCE65R540K-VB is very suitable for power converters, especially in high-voltage input applications. It can effectively handle input voltages up to 650V while maintaining a reasonable on-resistance to improve conversion efficiency.
2. **Switching power supply**
This MOSFET can be widely used in high-frequency switching power supplies, which can quickly switch states, thereby reducing switching losses and ensuring efficient power conversion and management.
3. **Photovoltaic inverter**
In photovoltaic inverters, NCE65R540K-VB can be used as the main switch to ensure efficient DC-AC conversion and improve the overall energy efficiency of solar energy systems.
4. **Electric vehicle charging system**
In electric vehicle charging stations, the device can be used as a switching element in a high-voltage DC-DC converter to provide a stable high-voltage power supply to support fast charging requirements.
5. **Industrial Power Management**
NCE65R540K-VB is suitable for various industrial power management applications, such as motor control and high-voltage power supply systems, providing reliable switching performance to ensure safe and efficient operation of equipment.
The high voltage resistance and reliability of NCE65R540K-VB make it excel in many high-voltage applications, making it an ideal choice for designing efficient power electronics products.
Technical support:
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