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NCE65R540I-VB Product details
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The following is the product introduction, detailed parameter description and application examples of **NCE65R540I-VB** single N-channel MOSFET:
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### **I. Product Introduction**
NCE65R540I-VB is a high-performance single N-channel MOSFET in TO251 package, designed for high voltage applications, with a drain-source voltage (VDS) of up to 650V. The device performs well in high-voltage environments, with a maximum gate-source voltage (VGS) of ±30V, suitable for a variety of power supply conditions. Its threshold voltage (Vth) is 3.5V, which can meet the requirements of most control circuits. The on-resistance (RDS(ON)) of NCE65R540I-VB at VGS=10V is 370mΩ, which effectively reduces power consumption and heat generation. The maximum drain current (ID) is 11A, suitable for medium current and high voltage application scenarios. Using SJ_Multi-EPI technology, NCE65R540I-VB ensures stability and reliability in high temperature and high voltage environments, making it an ideal choice for power management and drive applications.
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### **I. Product Introduction**
NCE65R540I-VB is a high-performance single N-channel MOSFET in TO251 package, designed for high voltage applications, with a drain-source voltage (VDS) of up to 650V. The device performs well in high-voltage environments, with a maximum gate-source voltage (VGS) of ±30V, suitable for a variety of power supply conditions. Its threshold voltage (Vth) is 3.5V, which can meet the requirements of most control circuits. The on-resistance (RDS(ON)) of NCE65R540I-VB at VGS=10V is 370mΩ, which effectively reduces power consumption and heat generation. The maximum drain current (ID) is 11A, suitable for medium current and high voltage application scenarios. Using SJ_Multi-EPI technology, NCE65R540I-VB ensures stability and reliability in high temperature and high voltage environments, making it an ideal choice for power management and drive applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 11A | 370mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
### **II. Detailed parameter description**
- **Model**: NCE65R540I-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **Drain to source voltage (VDS)**: 650V
- **Gate to source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 370mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
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- **Model**: NCE65R540I-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **Drain to source voltage (VDS)**: 650V
- **Gate to source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 370mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
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Domain and module applications：
**III. Application fields and module examples**
**1. Switching power supply (SMPS)**
NCE65R540I-VB is suitable for switching power supply, and can operate stably under high voltage and high frequency conditions, realize efficient power conversion, and reduce the energy consumption of the system.
**2. Inverter**
This MOSFET is very suitable for photovoltaic inverters and other high-voltage inverters. It can effectively convert DC power to AC power, meet the needs of efficient power generation systems, and improve energy efficiency.
**3. Industrial motor drive**
In the field of motor control, NCE65R540I-VB can be used in high-voltage motor drive circuits to ensure the efficiency and stability of the motor during startup and operation, and support various industrial automation applications.
**4. High-frequency power amplifier**
This device is also used in high-frequency power amplifiers in the communication field, which can provide stable power output, meet the needs of various signal amplification, and support more efficient wireless communication systems.
**5. Power Electronics Applications**
Due to its high voltage resistance and good current carrying capacity, NCE65R540I-VB can be used in various power electronic modules, such as DC-DC converters, power factor correction (PFC) circuits and other power management solutions to improve the efficiency and reliability of the entire power system.
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With its high voltage capability, moderate on-resistance and reliable current carrying capacity, NCE65R540I-VB is suitable for various high-voltage power management and drive applications and is an ideal choice for high-efficiency circuit design.
**1. Switching power supply (SMPS)**
NCE65R540I-VB is suitable for switching power supply, and can operate stably under high voltage and high frequency conditions, realize efficient power conversion, and reduce the energy consumption of the system.
**2. Inverter**
This MOSFET is very suitable for photovoltaic inverters and other high-voltage inverters. It can effectively convert DC power to AC power, meet the needs of efficient power generation systems, and improve energy efficiency.
**3. Industrial motor drive**
In the field of motor control, NCE65R540I-VB can be used in high-voltage motor drive circuits to ensure the efficiency and stability of the motor during startup and operation, and support various industrial automation applications.
**4. High-frequency power amplifier**
This device is also used in high-frequency power amplifiers in the communication field, which can provide stable power output, meet the needs of various signal amplification, and support more efficient wireless communication systems.
**5. Power Electronics Applications**
Due to its high voltage resistance and good current carrying capacity, NCE65R540I-VB can be used in various power electronic modules, such as DC-DC converters, power factor correction (PFC) circuits and other power management solutions to improve the efficiency and reliability of the entire power system.
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With its high voltage capability, moderate on-resistance and reliable current carrying capacity, NCE65R540I-VB is suitable for various high-voltage power management and drive applications and is an ideal choice for high-efficiency circuit design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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