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NCE65R260D-VB Product details

Product introduction:

The following is the product introduction, detailed parameter description, application areas and module examples of the **NCE65R260D-VB** MOSFET.

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### 1. Product Introduction
**NCE65R260D-VB** is a high voltage **single N-channel MOSFET**, using **TO263 package**, designed for high voltage applications. It has **650V drain-source voltage (VDS)** and **15A maximum drain current (ID)**, which is very suitable for industrial, power management and high power conversion. The device's on-resistance **RDS(ON)** is **300mΩ** at **VGS=10V**, combined with its **3.5V threshold voltage (Vth)**, ensuring its high efficiency under different working conditions. With **SJ_Multi-EPI** technology, NCE65R260D-VB reduces power consumption while improving current carrying capacity, and is widely used in power supplies and switching converters.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 650V 3.5V 15A 300mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 650V 3.5V 15A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 650V 3.5V 15A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
2. Detailed parameter description
- **Model**: NCE65R260D-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON) (on-resistance)**:
- 300mΩ @ VGS = 10V
- **ID (maximum drain current)**: 15A
- **Technology**: SJ_Multi-EPI
- **Package type**: TO263, provides excellent heat dissipation capability, suitable for high power applications.

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Domain and module applications:


### III. Application fields and module examples

1. **High-voltage power management**
NCE65R260D-VB is very suitable for **high-voltage switching power supplies** and **DC-DC converters**. Its **650V withstand voltage capability** enables it to safely and efficiently handle power conversion, ensuring stable operation in high-voltage environments, and is widely used in scenarios such as industrial power supplies and server power supplies.

2. **Motor drive**
This MOSFET is suitable for **industrial motor control systems**, such as motor drives and servo drive systems. Due to its good conduction characteristics and high withstand voltage, it can effectively control high-voltage motors, improve motor efficiency and reduce power consumption.

3. **Photovoltaic inverter**
In **solar power generation** systems, NCE65R260D-VB can be used as an important part of the inverter to convert the DC power generated by photovoltaic panels into AC power. Its high withstand voltage and stable performance ensure reliability under extreme weather conditions and improve the power generation efficiency of photovoltaic systems.

4. **LED driver applications**
NCE65R260D-VB can also be used in **LED driver circuits**, especially in high-voltage applications. Its low on-resistance can effectively reduce energy loss and improve the energy efficiency of LED lighting.

5. **Power equipment and switchgear**
The device is suitable for various **power control equipment**, such as high-voltage switches and relay drivers, to ensure stability and safety during high-voltage switching. Applications in power distribution and power management systems help improve the operating efficiency and safety of the entire power grid.

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### Summary
**NCE65R260D-VB**, as a **650V high-voltage N-channel MOSFET**, ensures reliability and stability in various high-power and high-voltage applications with its **TO263 package** and **SJ_Multi-EPI** technology. It is suitable for**power management, motor drive, photovoltaic inverter, LED drive** and other fields, meeting the high performance and high efficiency requirements of modern electronic equipment. This device can not only effectively reduce energy loss, but also maintain excellent performance in harsh environments, making it an ideal choice for high-voltage electronic applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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