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NCE65R180T-VB Product details

Product introduction:

The following is the product introduction, parameter description and application example of **NCE65R180T-VB** single N-channel MOSFET:

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### **I. Product Introduction**
NCE65R180T-VB is a high-performance single N-channel MOSFET in TO247 package, designed for high voltage applications, with a drain-source voltage (VDS) of up to 650V. The device has excellent turn-on characteristics, and the gate-source voltage (VGS) allows operation in the range of ±30V, ensuring its reliability under various power supply conditions. The threshold voltage (Vth) of NCE65R180T-VB is 3.5V, which is suitable for most control circuits. Its on-resistance (RDS(ON)) is 160mΩ at VGS=10V, which can effectively reduce power consumption and heat generation, thereby improving overall efficiency. The maximum drain current (ID) is 20A, making it suitable for power management applications requiring high voltage and medium current. Using SJ_Multi-EPI technology, NCE65R180T-VB shows excellent stability and performance in high temperature and high voltage environments.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 650V 3.5V 20A 160mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N


### **II. Detailed parameter description**
- **Model**: NCE65R180T-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Drain to source voltage (VDS)**: 650V
- **Gate to source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 160mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI

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Domain and module applications:

**III. Application fields and module examples**

**1. Power converter**
NCE65R180T-VB is suitable for switching power supplies (SMPS) and DC-DC converters, and can operate stably in high-voltage environments, provide efficient power conversion, reduce energy consumption and improve system efficiency.

**2. Inverter**
This MOSFET is widely used in photovoltaic inverters and other high-voltage inverters, and can effectively convert DC power to AC power to meet the needs of high-efficiency power generation systems.

**3. Motor drive**
NCE65R180T-VB performs well in the field of motor control and is suitable for high-voltage motor drive circuits to ensure high efficiency and reliability of the motor during startup and operation.

**4. Industrial automation equipment**
Due to its high withstand voltage and good current carrying capacity, this MOSFET can be used as a switching element in industrial automation equipment to support various automation control and drive applications.

**5. Smart Home and Building Automation**
The application of this device in smart home systems includes lighting control, power management of heating, ventilation and air conditioning (HVAC) systems, and control of other high-voltage power modules, providing users with more efficient and energy-saving intelligent solutions.

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With its high voltage, moderate on-resistance and good current capability, NCE65R180T-VB is suitable for various high-voltage power management, drive and automation applications, and is an ideal choice for high-efficiency circuit design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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