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NCE60T2K2I-VB Product details

Product introduction:

The following is the product introduction, detailed parameter description, application fields and module examples of the **NCE60T2K2I-VB** MOSFET.

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### 1. Product Introduction
**NCE60T2K2I-VB** is a high voltage **single N-channel MOSFET**, using **TO251 package**, designed for high voltage, low power switching applications. The device supports **600V drain-source voltage (VDS)** and **6.2A maximum drain current (ID)**, suitable for industrial power supplies, high-voltage motor control and other fields. Its on-resistance **RDS(ON)** is **800mΩ** at **VGS=10V** and **1000mΩ** at **VGS=4.5V**. Thanks to the **Planar structure**, the device has achieved a good balance between performance and reliability, and is very suitable for systems that require high stability and long-term operation, such as inverters, LED drivers and industrial control equipment.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO251 Single-N 600V 2.5V 6.2A 800mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO251 Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO251 Single-N 600V 2.5V 6.2A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO251 Single-N 600V 2.5V 6.2A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO251 Single-N

### 2. Detailed parameter description
- **Model**: NCE60T2K2I-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 600V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 2.5V
- **RDS(ON) (on-resistance)**:
- 1000mΩ @ VGS = 4.5V
- 800mΩ @ VGS = 10V
- **ID (maximum drain current)**: 6.2A
- **Technology**: Planar
- **Package type**: TO251, provides good heat dissipation performance, suitable for high power scenarios.

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Domain and module applications:

III. Application fields and module examples

1. **High-voltage industrial power supply**
In industrial applications, the NCE60T2K2I-VB is ideal for **high-voltage DC-DC converters and switching power supplies**. Its **600V withstand voltage capability** ensures stable power conversion in harsh environments. Common applications include power conditioning equipment in factory automation.

2. **Motor control system**
This MOSFET can be used for **industrial motor control**, such as drive modules for fans, pumps, and small motors. The planar structure design ensures stable thermal performance during continuous operation, suitable for motor systems with high reliability requirements.

3. **LED drive and lighting system**
In **LED drivers**, the NCE60T2K2I-VB can be used as a key high-voltage switching device to ensure efficient power conversion and reduce energy losses. This is especially important for lighting systems that need to operate for a long time, such as street lighting and industrial lighting.

4. **Photovoltaic inverter**
In **solar power generation systems**, this MOSFET can be used as part of an inverter to convert the DC power output from the photovoltaic panel into AC power. Its **600V withstand voltage characteristics** make it very suitable for this high-voltage energy conversion application.

5. **Smart grid and high-voltage switchgear**
NCE60T2K2I-VB can also be used in **switchgear** in smart grids for distributed power management and high-voltage line switching. The high stability and low loss characteristics brought by the planar structure ensure its long-term stable operation in the power system.

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### Summary
**NCE60T2K2I-VB**, as a **600V high-voltage N-channel MOSFET**, has achieved a good balance between reliability and performance with its **Planar structure**. Its **TO251 package** provides good heat dissipation characteristics and is suitable for use in high voltage fields such as **industrial power supplies, motor drives, LED lighting, photovoltaic inverters**, etc. This device not only meets high voltage and high power requirements, but also maintains excellent stability in long-term continuous operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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