NCE60T2K1K-VB Product details
Product introduction:
NCE60T2K1K-VB is a **600V N-Channel MOSFET** in **TO252 package**, suitable for high voltage and low current applications. It has excellent voltage resistance, can withstand **600V** drain-source voltage (VDS), and supports **±30V** gate-source voltage (VGS). The threshold voltage (Vth) of the device is **3.5V**, and the on-resistance (RDS(ON)) is **1800mΩ@VGS=4.5V** and **1440mΩ@VGS=10V**. NCE60T2K1K-VB uses **Plannar technology** and is suitable for application scenarios requiring high voltage stability and low power consumption, such as power management and power control modules.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 600V | 3.5V | 4A | 1440mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 600V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 600V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Model**: NCE60T2K1K-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 600V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 1800mΩ @ VGS = 4.5V
- 1440mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 4A
- **Technology**: Plannar
- **Operating temperature range**: -55°C ~ 150°C
- **Package features**: TO252 Provides low thermal resistance and good heat dissipation performance, suitable for surface mounting design.
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Domain and module applications:
The high voltage characteristics and reliable conduction capability of NCE60T2K1K-VB make it widely used in various fields and modules:
1. **LED drive circuit**: In high-voltage LED lighting equipment, this MOSFET can be used in constant current drive circuits to ensure stable operation of lamps and maintain high efficiency at high power output.
2. **Power adapter and charger**: Suitable for switching circuits in high-voltage power adapters and chargers to help achieve efficient energy transmission and stable output voltage.
3. **Home appliance control system**: In home appliances such as washing machines and microwave ovens, it is used to control power management modules to improve the energy efficiency and safety of the system.
4. **Industrial power module**: In industrial-grade high-voltage power modules, MOSFET is used to achieve DC-DC conversion, inversion and power regulation to ensure that the equipment maintains efficient operation under different load conditions.
5. **Photovoltaic and energy storage systems**: In photovoltaic power generation systems and energy storage devices, NCE60T2K1K-VB can be used in inverters and battery management modules to achieve efficient energy conversion and management.
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NCE60T2K1K-VB has become an indispensable component in high-voltage equipment with its **high withstand voltage** and **low conduction loss**. Its **TO252 package** design provides good heat dissipation performance and is suitable for surface mount applications. It is widely used in power management systems of power electronic equipment and consumer electronics.
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