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NCE60T2K1I-VB Product details
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1. NCE60T2K1I-VB Product Introduction
NCE60T2K1I-VB is a **single N-channel MOSFET** in **TO251 package**. Its design focuses on high voltage applications with a maximum **drain-source voltage (VDS)** of **600V**. This device has a gate-source voltage (VGS) of ±30V and a turn-on threshold voltage (Vth) of 2.5V. The **on-resistance (RDS(ON))** is **800mΩ** at **VGS = 10V** and **1000mΩ** at **VGS = 4.5V**. Although the current carrying capacity is **6.2A**, its high voltage tolerance makes it very suitable for light power high voltage conversion applications. The device adopts **planar technology (Planar Technology)**, which ensures stability and durability, and has excellent thermal performance.
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NCE60T2K1I-VB is a **single N-channel MOSFET** in **TO251 package**. Its design focuses on high voltage applications with a maximum **drain-source voltage (VDS)** of **600V**. This device has a gate-source voltage (VGS) of ±30V and a turn-on threshold voltage (Vth) of 2.5V. The **on-resistance (RDS(ON))** is **800mΩ** at **VGS = 10V** and **1000mΩ** at **VGS = 4.5V**. Although the current carrying capacity is **6.2A**, its high voltage tolerance makes it very suitable for light power high voltage conversion applications. The device adopts **planar technology (Planar Technology)**, which ensures stability and durability, and has excellent thermal performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 600V | 2.5V | 6.2A | 800mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 600V | 2.5V | 6.2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 600V | 2.5V | 6.2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
II. NCE60T2K1I-VB Detailed parameter description
| **Parameter** | **Value** | **Description** |
|------------------------|---------------------------|----------------------------------|
| **Package type** | TO251 | Provides compact structure and good heat dissipation capability|
| **Configuration** | Single N-channel MOSFET | Single-channel switch tube|
| **Drain-source voltage (VDS)** | 600V | Maximum voltage between drain and source|
| **Gate-source voltage (VGS)** | ±30V | Maximum voltage between gate and source|
| **Turn-on threshold voltage (Vth)** | 2.5V | Minimum voltage required to turn on the device|
| **On-resistance (RDS(ON))** | 1000mΩ (@VGS = 4.5V) | On-resistance at low gate voltage|
| | 800mΩ (@VGS = 10V) | On-resistance at high gate voltage|
| **Maximum drain current (ID)** | 6.2A | Maximum sustainable current|
| **Technology** | Planar technology | Provides reliable performance and stable current control|
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| **Parameter** | **Value** | **Description** |
|------------------------|---------------------------|----------------------------------|
| **Package type** | TO251 | Provides compact structure and good heat dissipation capability|
| **Configuration** | Single N-channel MOSFET | Single-channel switch tube|
| **Drain-source voltage (VDS)** | 600V | Maximum voltage between drain and source|
| **Gate-source voltage (VGS)** | ±30V | Maximum voltage between gate and source|
| **Turn-on threshold voltage (Vth)** | 2.5V | Minimum voltage required to turn on the device|
| **On-resistance (RDS(ON))** | 1000mΩ (@VGS = 4.5V) | On-resistance at low gate voltage|
| | 800mΩ (@VGS = 10V) | On-resistance at high gate voltage|
| **Maximum drain current (ID)** | 6.2A | Maximum sustainable current|
| **Technology** | Planar technology | Provides reliable performance and stable current control|
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Domain and module applications：
III. Application Fields and Module Examples
1. **LED Lighting Drivers:**
NCE60T2K1I-VB is very suitable for **LED driver power supply**, which can stably drive LED under high voltage conditions to ensure the reliability and life of the lighting system.
2. **Power Converters:**
In **DC-DC and AC-DC converters**, this device can be used in the high-voltage circuit part to achieve stable and efficient power transmission.
3. **Smart Meters:**
In the **high-voltage measurement module** of smart meters, NCE60T2K1I-VB provides safe and stable power control to ensure the accuracy of data measurement and the safety of equipment.
4. **Industrial Power Supplies:**
This device is suitable for **industrial switching power supply modules**, supporting equipment to operate in harsh environments and providing stable power output.
5. **Home Appliances:**
In **home appliance power modules** such as washing machines and refrigerators, this MOSFET can effectively control current, reduce power consumption, and improve system energy efficiency.
6. **Power Adapters:**
NCE60T2K1I-VB can be used in the output control part of **high-voltage adapters** to provide efficient power management for devices such as laptops and monitors.
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NCE60T2K1I-VB is a MOSFET designed for **high-voltage conversion applications**. With its **600V** withstand voltage capability and **planar technology**, it ensures reliability in complex industrial and consumer electronics scenarios. Its **TO251 package** provides good heat dissipation performance and is suitable for power management and conversion modules that require high voltage control.
1. **LED Lighting Drivers:**
NCE60T2K1I-VB is very suitable for **LED driver power supply**, which can stably drive LED under high voltage conditions to ensure the reliability and life of the lighting system.
2. **Power Converters:**
In **DC-DC and AC-DC converters**, this device can be used in the high-voltage circuit part to achieve stable and efficient power transmission.
3. **Smart Meters:**
In the **high-voltage measurement module** of smart meters, NCE60T2K1I-VB provides safe and stable power control to ensure the accuracy of data measurement and the safety of equipment.
4. **Industrial Power Supplies:**
This device is suitable for **industrial switching power supply modules**, supporting equipment to operate in harsh environments and providing stable power output.
5. **Home Appliances:**
In **home appliance power modules** such as washing machines and refrigerators, this MOSFET can effectively control current, reduce power consumption, and improve system energy efficiency.
6. **Power Adapters:**
NCE60T2K1I-VB can be used in the output control part of **high-voltage adapters** to provide efficient power management for devices such as laptops and monitors.
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NCE60T2K1I-VB is a MOSFET designed for **high-voltage conversion applications**. With its **600V** withstand voltage capability and **planar technology**, it ensures reliability in complex industrial and consumer electronics scenarios. Its **TO251 package** provides good heat dissipation performance and is suitable for power management and conversion modules that require high voltage control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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