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NCE60T1K5K-VB Product details
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1. NCE60T1K5K-VB Product Introduction
NCE60T1K5K-VB is a high-voltage single N-channel MOSFET in a **TO252** package, designed for medium-power and high-voltage power conversion applications. The device supports a drain-source voltage (V_DS) of **600V** and a gate-source voltage (V_GS) of up to ±30V. Its **threshold voltage (V_th)** is 3.5V, ensuring reliable conduction at higher gate voltages. The on-resistance (R_DS(ON)) is 1800mΩ at V_GS=4.5V and 1440mΩ at V_GS=10V. This MOSFET uses **Plannar (planar process) technology**, which has the advantages of high stability and low manufacturing cost, and is suitable for high-voltage systems that require lower leakage current. Its maximum drain current (I_D) is **4A**, which is suitable for circuit designs with moderate power and low frequency.
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NCE60T1K5K-VB is a high-voltage single N-channel MOSFET in a **TO252** package, designed for medium-power and high-voltage power conversion applications. The device supports a drain-source voltage (V_DS) of **600V** and a gate-source voltage (V_GS) of up to ±30V. Its **threshold voltage (V_th)** is 3.5V, ensuring reliable conduction at higher gate voltages. The on-resistance (R_DS(ON)) is 1800mΩ at V_GS=4.5V and 1440mΩ at V_GS=10V. This MOSFET uses **Plannar (planar process) technology**, which has the advantages of high stability and low manufacturing cost, and is suitable for high-voltage systems that require lower leakage current. Its maximum drain current (I_D) is **4A**, which is suitable for circuit designs with moderate power and low frequency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 600V | 3.5V | 4A | 1440mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 600V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 600V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. Detailed parameter description
| **Parameter** | **Value** |
|--------------------|-----------------------------|
| **Model** | NCE60T1K5K-VB |
| **Package** | TO252 |
| **Configuration** | Single N-channel|
| **Drain-source voltage (V_DS)** | 600V |
| **Gate-source voltage (V_GS)** | ±30V |
| **Threshold voltage (V_th)** | 3.5V |
| **On-resistance (R_DS(ON))** | 1800mΩ (V_GS=4.5V)
1440mΩ (V_GS=10V) |
| **Drain current (I_D)** | 4A |
| **Technology** | Plannar (planar process) |
| **Operating temperature range** | -55°C to 150°C |
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| **Parameter** | **Value** |
|--------------------|-----------------------------|
| **Model** | NCE60T1K5K-VB |
| **Package** | TO252 |
| **Configuration** | Single N-channel|
| **Drain-source voltage (V_DS)** | 600V |
| **Gate-source voltage (V_GS)** | ±30V |
| **Threshold voltage (V_th)** | 3.5V |
| **On-resistance (R_DS(ON))** | 1800mΩ (V_GS=4.5V)
1440mΩ (V_GS=10V) |
| **Drain current (I_D)** | 4A |
| **Technology** | Plannar (planar process) |
| **Operating temperature range** | -55°C to 150°C |
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Domain and module applications：
III. Application fields and module examples
1. **LED lighting driver**
NCE60T1K5K-VB is suitable for high-voltage driver modules for LED lighting, providing stable switching characteristics and leakage current control, ensuring high reliability and safety in energy-saving lighting systems.
2. **Smart meters and industrial control systems**
In smart meters and industrial control systems, this MOSFET can be used as a high-voltage control switch to handle power management and state switching to improve system efficiency.
3. **Small switching power supply (SMPS)**
This device is suitable for low-power switching power supply design. With its 600V withstand voltage capability, it can effectively improve power conversion efficiency and reduce switching losses.
4. **Home appliance control circuit**
In home appliances such as microwave ovens and washing machines, NCE60T1K5K-VB can be used as a control switch to manage the connection between different circuit modules to achieve energy-saving operation.
5. **Charging Adapter and Standby Power Supply**
Due to its high voltage capability and good leakage current control capability, this MOSFET can be used in small charging adapters and standby power modules to ensure extremely low power consumption when the device is in standby mode.
NCE60T1K5K-VB has good electrical performance and voltage resistance characteristics, suitable for a variety of power electronics applications, especially in medium power conversion and high voltage environments to provide reliability and stability.
1. **LED lighting driver**
NCE60T1K5K-VB is suitable for high-voltage driver modules for LED lighting, providing stable switching characteristics and leakage current control, ensuring high reliability and safety in energy-saving lighting systems.
2. **Smart meters and industrial control systems**
In smart meters and industrial control systems, this MOSFET can be used as a high-voltage control switch to handle power management and state switching to improve system efficiency.
3. **Small switching power supply (SMPS)**
This device is suitable for low-power switching power supply design. With its 600V withstand voltage capability, it can effectively improve power conversion efficiency and reduce switching losses.
4. **Home appliance control circuit**
In home appliances such as microwave ovens and washing machines, NCE60T1K5K-VB can be used as a control switch to manage the connection between different circuit modules to achieve energy-saving operation.
5. **Charging Adapter and Standby Power Supply**
Due to its high voltage capability and good leakage current control capability, this MOSFET can be used in small charging adapters and standby power modules to ensure extremely low power consumption when the device is in standby mode.
NCE60T1K5K-VB has good electrical performance and voltage resistance characteristics, suitable for a variety of power electronics applications, especially in medium power conversion and high voltage environments to provide reliability and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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