NCE60T1K5I-VB Product details
Product introduction:
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### **I. Product Introduction**
NCE60T1K5I-VB is a high-voltage single N-channel MOSFET, packaged in TO251, with excellent high-voltage and small and medium current capabilities. Its drain-source voltage (VDS) is as high as 600V, which can meet the needs of high-voltage circuits, and operates within the gate-to-source voltage (VGS) range of ±30V, ensuring reliable operation of the device under different drive voltages. The threshold voltage (Vth) of the device is 2.5V, which can easily achieve fast switching. The on-resistance (RDS(ON)) is 800mΩ at VGS=10V, which supports efficient current conduction in high-voltage applications. The maximum drain current (ID) is 6.2A, making it suitable for modules and systems that require high voltage resistance and small current. NCE60T1K5I-VB adopts planar technology and provides stable thermal management performance, making it an ideal choice for high-voltage drive and power control systems.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 600V | 2.5V | 6.2A | 800mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 600V | 2.5V | 6.2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 600V | 2.5V | 6.2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
- **Model**: NCE60T1K5I-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **Drain to source voltage (VDS)**: 600V
- **Gate to source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 1000mΩ @ VGS = 4.5V
- 800mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 6.2A
- **Technology**: Plannar
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### **III. Application areas and module examples**
Domain and module applications:
**1. Industrial control systems**
NCE60T1K5I-VB is suitable for switching elements in industrial control circuits, especially motor drives and relay controls in high voltage environments. In the field of industrial control, it can provide safe switching and current conduction.
**2. Inverters and high-voltage conversion circuits**
This MOSFET can be used in photovoltaic inverters and other high-voltage DC-AC conversion circuits to effectively convert electrical energy and improve system reliability and efficiency.
**3. Smart grid and power management modules**
Due to its high voltage withstand capability of 600V, NCE60T1K5I-VB performs well in smart grid applications, especially in high-voltage switching and power distribution systems, providing stable current management for grid equipment.
**4. Power tools and household appliances**
This MOSFET is suitable for high-voltage control circuits in household appliances or power tools, which can ensure the stable operation of tools and equipment and increase their service life.
**5. LED lighting system**
NCE60T1K5I-VB can also play a role in LED driving and high-voltage lighting systems, supporting the switching and dimming control of high-power LEDs to ensure efficient and energy-saving operation.
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With its high withstand voltage, reasonable on-resistance and medium current capability, NCE60T1K5I-VB is an ideal choice for industrial and home appliance control, high-voltage conversion circuits and power management systems, ensuring efficient operation and reliability of the system.
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