NCE60R540I-VB Product details
Product introduction:
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### 1. Product Introduction
**NCE60R540I-VB** is a high-voltage **single N-channel MOSFET** in a **TO251 package**, designed for applications that require high voltage resistance and high power handling capabilities. The device has a **drain-source voltage (VDS)** of up to **650V**, making it ideal for high-voltage power supplies and motor drive applications. Its **maximum drain current (ID)** is **9A**, and it uses **SJ_Multi-EPI technology** to achieve a lower on-resistance (**RDS(ON)**), reaching **500mΩ** at **VGS = 10V**, effectively reducing power loss and heat generation. NCE60R540I-VB is particularly suitable for high-voltage switching power supplies, inverters, electric vehicles, and industrial equipment.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 9A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
- **Model**: NCE60R540I-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON) (on-resistance)**: 500mΩ @ VGS = 10V
- **ID (maximum drain current)**: 9A
- **Technology**: SJ_Multi-EPI
- **Package type**: TO251, suitable for high voltage power supply and motor drive applications.
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Domain and module applications:
1. **High-voltage switching power supply**
The NCE60R540I-VB can be widely used in **high-voltage switching power supplies**, such as DC-DC converters in power transmission and distribution systems. Its drain-source voltage of up to **650V** ensures its stability in high-voltage environments, making it suitable for high-efficiency power management.
2. **Electric vehicles and hybrid vehicles**
This MOSFET performs well in the high-voltage power management systems of **electric vehicles and hybrid vehicles**, effectively driving motors and controlling power conversion. Its high voltage and current handling capabilities make it an ideal choice for electric vehicle power management systems.
3. **Industrial motor drive**
In **industrial automation** and **motor control** applications, the NCE60R540I-VB is able to drive high-voltage motors, suitable for the control of various industrial equipment such as fans, pumps and conveyors, providing reliable current handling capabilities to ensure the normal operation of equipment under high load conditions.
4. **Renewable Energy Systems**
The NCE60R540I-VB is suitable for **photovoltaic inverters and wind power generation systems**, and can be used as an energy conversion module to ensure that the power obtained from renewable energy sources is effectively converted into usable power. Its high withstand voltage and high current capabilities make it very suitable for these applications.
5. **High Frequency Switching Applications**
Due to its low on-resistance and high withstand voltage capability, this MOSFET is suitable for **high frequency switching applications**, such as switching power supplies and adapters, ensuring high efficiency and low loss operation, thereby improving the overall performance of the system.
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