NCE60R540F-VB Product details
Product introduction:
NCE60R540F-VB is a high-performance **N-Channel MOSFET** designed for high voltage and high power applications, using **TO220F package**. Its maximum drain-source voltage (VDS) reaches **650V**, suitable for use in environments requiring high voltage resistance. The maximum gate-source voltage (VGS) of this MOSFET is **±30V**, and the threshold voltage (Vth) is **3.5V**, with excellent switching characteristics. Its on-resistance (RDS(ON)) is **320mΩ** @ VGS=10V, ensuring low power consumption and good thermal management at rated current. Using **Plannar technology**, the device has excellent thermal stability and reliability, suitable for a variety of demanding application scenarios.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 320mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Model**: NCE60R540F-VB
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 320mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 20A
- **Technology**: Plannar
- **Operating ambient temperature**: Suitable for industrial applications
- **Heat dissipation characteristics**: The TO220F package design ensures efficient heat dissipation and is suitable for high power density application scenarios.
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Domain and module applications:
The high voltage and high power characteristics of NCE60R540F-VB make it suitable for multiple key application areas. The following are some typical application scenarios:
1. **High-voltage switching power supply (SMPS)**: In the design of high-voltage switching power supply, this MOSFET can be used as the main switching element to help achieve efficient power conversion. It is widely used in computer power supply, communication equipment and industrial power supply systems.
2. **Motor drive**: NCE60R540F-VB can be used to drive high-voltage motors, such as in the drive systems of industrial automation equipment, power tools and electric vehicles, to improve the power control capability and response speed of the motor.
3. **Photovoltaic inverter**: This device plays an important role in solar power generation systems. It can convert the DC power generated by solar cells into AC power. It is suitable for use in high-voltage photovoltaic inverters to improve power generation efficiency.
4. **Battery Charger**: In high-voltage battery chargers, the NCE60R540F-VB can improve charging efficiency and is suitable for electric vehicles, energy storage systems and other applications that require high-voltage charging.
5. **Home Appliance Control**: This MOSFET is also commonly used in home appliance control, such as air conditioners, refrigerators and washing machines, to optimize power control, reduce energy consumption and improve energy efficiency.
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With its high withstand voltage, low on-resistance and good thermal performance, the NCE60R540F-VB is an ideal choice for modern high-voltage power management, switching applications and motor drives. Its TO220F package design ensures excellent heat dissipation, enabling it to operate stably in a variety of applications and meet the high requirements of users.
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