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NCE60R360F-VB Product details
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The following is the product introduction, parameter description and application examples of **NCE60R360F-VB** single N-channel MOSFET:
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### **I. Product Introduction**
NCE60R360F-VB is a high-voltage single N-channel MOSFET in a TO220F package, suitable for high voltage and medium current applications. The drain-source voltage (VDS) of this device is as high as 650V, making it very suitable for applications requiring high withstand voltage characteristics. The gate-to-source voltage (VGS) is ±30V, which can meet a variety of driving requirements. Its threshold voltage (Vth) is 3.5V, ensuring that it is turned on at a lower gate voltage. The on-resistance (RDS(ON)) of this MOSFET is 320mΩ at a VGS of 10V, which can effectively reduce conduction losses. The maximum drain current (ID) is 20A, suitable for a variety of current applications. With Plannar technology, NCE60R360F-VB provides excellent switching characteristics and thermal performance, making it an ideal choice for high-voltage switching and power management solutions.
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### **I. Product Introduction**
NCE60R360F-VB is a high-voltage single N-channel MOSFET in a TO220F package, suitable for high voltage and medium current applications. The drain-source voltage (VDS) of this device is as high as 650V, making it very suitable for applications requiring high withstand voltage characteristics. The gate-to-source voltage (VGS) is ±30V, which can meet a variety of driving requirements. Its threshold voltage (Vth) is 3.5V, ensuring that it is turned on at a lower gate voltage. The on-resistance (RDS(ON)) of this MOSFET is 320mΩ at a VGS of 10V, which can effectively reduce conduction losses. The maximum drain current (ID) is 20A, suitable for a variety of current applications. With Plannar technology, NCE60R360F-VB provides excellent switching characteristics and thermal performance, making it an ideal choice for high-voltage switching and power management solutions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 320mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
### **II. Detailed parameter description**
- **Model**: NCE60R360F-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Drain to source voltage (VDS)**: 650V
- **Gate to source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 320mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 20A
- **Technology**: Plannar
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Domain and module applications：
**III. Application fields and module examples**
**1. Switching power supply**
NCE60R360F-VB is widely used in switching power supply design, suitable for high voltage conversion and power management. It can withstand high voltage of 650V, ensuring the safety and reliability of the power supply system.
**2. High voltage DC-DC converter**
This MOSFET is very suitable for high voltage DC-DC converters, which can effectively convert voltage and ensure high efficiency and low loss operation of the system.
**3. Motor drive circuit**
In motor drive applications, NCE60R360F-VB can be used to control DC and stepper motors, providing stable current control and efficient switching capabilities to ensure smooth operation of the motor.
**4. Lighting and LED drive**
Due to its low conduction loss, this MOSFET is also suitable for LED drive circuits, especially in high voltage lighting applications, which can ensure efficient operation of LED lamps and extend their service life.
**5. UPS (Uninterruptible Power Supply) System**
NCE60R360F-VB can also play an important role in the uninterruptible power supply system, providing efficient power switching and management to ensure continuous power supply of equipment in the event of a power outage.
With its high voltage resistance, high current capability and good thermal performance, NCE60R360F-VB has become an important component in modern high-voltage power supply and drive solutions.
**1. Switching power supply**
NCE60R360F-VB is widely used in switching power supply design, suitable for high voltage conversion and power management. It can withstand high voltage of 650V, ensuring the safety and reliability of the power supply system.
**2. High voltage DC-DC converter**
This MOSFET is very suitable for high voltage DC-DC converters, which can effectively convert voltage and ensure high efficiency and low loss operation of the system.
**3. Motor drive circuit**
In motor drive applications, NCE60R360F-VB can be used to control DC and stepper motors, providing stable current control and efficient switching capabilities to ensure smooth operation of the motor.
**4. Lighting and LED drive**
Due to its low conduction loss, this MOSFET is also suitable for LED drive circuits, especially in high voltage lighting applications, which can ensure efficient operation of LED lamps and extend their service life.
**5. UPS (Uninterruptible Power Supply) System**
NCE60R360F-VB can also play an important role in the uninterruptible power supply system, providing efficient power switching and management to ensure continuous power supply of equipment in the event of a power outage.
With its high voltage resistance, high current capability and good thermal performance, NCE60R360F-VB has become an important component in modern high-voltage power supply and drive solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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