NCE60R1K2I-VB Product details
Product introduction:
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### 1. Product Introduction
**NCE60R1K2I-VB** is a high-voltage **single N-channel MOSFET** in a **TO251 package**, designed for applications that require high voltage resistance and high power handling capabilities. Its **drain-source voltage (VDS)** is as high as **650V**, making it ideal for high-voltage power supplies and inverter applications. The device has a **maximum drain current (ID)** of **5A** and uses **SJ_Multi-EPI technology** to achieve a lower on-resistance (**RDS(ON)**), reaching **950mΩ** at **VGS = 10V**, effectively reducing power loss and heat generation. NCE60R1K2I-VB is particularly suitable for high-voltage switching power supplies, industrial control systems, and motor drives.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
- **Model**: NCE60R1K2I-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON) (on-resistance)**: 950mΩ @ VGS = 10V
- **ID (maximum drain current)**: 5A
- **Technology**: SJ_Multi-EPI
- **Package type**: TO251, suitable for high voltage power supply applications.
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Domain and module applications:
1. **High-voltage switching power supply**
NCE60R1K2I-VB can be used in **high-voltage switching power supply**, such as DC-DC converters for power transmission and distribution. Its drain-source voltage of up to **650V** can meet the high-voltage requirements in power applications and ensure the stable operation of the system under high-voltage environment.
2. **Industrial motor drive**
In **industrial automation** and **motor control** applications, this MOSFET can effectively drive high-voltage motors, suitable for the control of fans, pumps and other industrial equipment, providing reliable current handling capabilities to ensure the normal operation of motors under high load conditions.
3. **Electric vehicles and hybrid vehicles**
NCE60R1K2I-VB is suitable for high-voltage power management and motor drive systems in **electric vehicles and hybrid vehicles**. Its high voltage withstand characteristics and good thermal management capabilities make it an ideal choice for electric vehicle power conversion systems.
4. **Renewable energy systems**
In **photovoltaic inverters and wind power generation systems**, the NCE60R1K2I-VB can be used as an energy conversion module to ensure that the power obtained from renewable energy sources is effectively converted into usable power. Its high voltage and high current handling capabilities make it suitable for these fields.
5. **High-frequency switching applications**
Due to its low on-resistance and high withstand voltage capability, this MOSFET is suitable for **high-frequency switching applications**, such as switching power supplies, adapters, etc., ensuring high efficiency and low-loss operation.
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Technical support:
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