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NCE60R1K2F-VB Product details

Product introduction:

NCE60R1K2F-VB Product Introduction

NCE60R1K2F-VB is a high-performance **N-Channel MOSFET**, designed for high voltage applications, using **TO220F package**. Its maximum drain-source voltage (VDS) reaches **650V**, which is very suitable for power management and switching circuits that require high voltage resistance. The maximum gate-source voltage (VGS) of this MOSFET is **±30V**, and the threshold voltage (Vth) is **3.5V**, providing good switching characteristics. Its on-resistance (RDS(ON)) is **1100mΩ** @ VGS=10V, ensuring low power consumption and heat generation under high current conditions. This product adopts **Plannar technology**, with excellent thermal stability and reliability, enabling it to work stably in harsh environments.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 650V 3.5V 7A 1100mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 650V 3.5V 7A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 650V 3.5V 7A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
Detailed parameter description

- **Model**: NCE60R1K2F-VB
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 7A
- **Technology**: Plannar
- **Operating ambient temperature**: Suitable for industrial applications
- **Heat dissipation characteristics**: The TO220F package design ensures efficient heat dissipation and is suitable for high power density application scenarios.

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Domain and module applications:

Applications and module examples

The high voltage and high performance of NCE60R1K2F-VB make it suitable for multiple key application areas. Here are some typical application scenarios:

1. **High-voltage switch mode power supply (SMPS)**: In high-voltage switch mode power supplies, this MOSFET can be used as the main switching element to achieve efficient power conversion, suitable for computer power supplies, communication equipment and industrial power supplies, etc.

2. **Motor drive**: In motor control applications such as power tools, robots and automation equipment, this device can be used to drive high-voltage motors to ensure high efficiency and response speed.

3. **Photovoltaic inverter**: In solar power generation systems, NCE60R1K2F-VB can be used to convert DC power into AC power to meet the high-voltage requirements of grid access and improve the system efficiency of photovoltaic power generation.

4. **Battery charger**: This MOSFET can be used in high-voltage battery chargers to help achieve fast charging, especially in electric vehicles and energy storage systems, to improve charging efficiency.

5. **Household appliances**: This MOSFET is also widely used in household appliances such as air conditioners, refrigerators and washing machines to optimize power control, improve energy efficiency and reduce energy consumption.

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NCE60R1K2F-VB combines high withstand voltage, low on-resistance and excellent thermal performance, making it an ideal choice for modern high-voltage power management, switching applications and motor drives. Its TO220F package design ensures excellent heat dissipation, enabling stable operation in a variety of applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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