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NCE60R180T-VB Product details
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1. NCE60R180T-VB Product Introduction
NCE60R180T-VB is a **single N-channel MOSFET**, using **TO247 package**, designed for high voltage and high current applications. Its **maximum drain-source voltage (VDS)** is up to **650V**, which is very suitable for applications that require high voltage tolerance. The device has a **gate-source voltage (VGS)** of ±30V, a **turn-on threshold voltage (Vth)** of **3.5V**, and a **75mΩ** low on-resistance (RDS(ON)) at **VGS = 10V**, ensuring small power loss in the on state. The maximum drain current (ID) can reach **47A**, allowing the MOSFET to work stably in a high power environment. The design using **SJ_Multi-EPI technology** further improves its efficiency and reliability, making it suitable for a variety of demanding power electronics applications.
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NCE60R180T-VB is a **single N-channel MOSFET**, using **TO247 package**, designed for high voltage and high current applications. Its **maximum drain-source voltage (VDS)** is up to **650V**, which is very suitable for applications that require high voltage tolerance. The device has a **gate-source voltage (VGS)** of ±30V, a **turn-on threshold voltage (Vth)** of **3.5V**, and a **75mΩ** low on-resistance (RDS(ON)) at **VGS = 10V**, ensuring small power loss in the on state. The maximum drain current (ID) can reach **47A**, allowing the MOSFET to work stably in a high power environment. The design using **SJ_Multi-EPI technology** further improves its efficiency and reliability, making it suitable for a variety of demanding power electronics applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
II. NCE60R180T-VB Detailed parameter description
| **Parameter** | **Value** | **Description** |
|------------------------|---------------------------|----------------------------------|
| **Package type** | TO247 | Provides good heat dissipation and mechanical strength|
| **Configuration** | Single N-channel MOSFET | Single-channel high-efficiency power switch|
| **Drain-source voltage (VDS)** | 650V | Maximum voltage between drain and source|
| **Gate-source voltage (VGS)** | ±30V | Maximum voltage between gate and source|
| **Turn-on threshold voltage (Vth)** | 3.5V | Minimum voltage required to start conduction|
| **On-resistance (RDS(ON))** | 75mΩ (@VGS = 10V) | On-resistance under high gate voltage|
| **Maximum drain current (ID)** | 47A | Maximum current the device can sustainably carry|
| **Technology** | SJ_Multi-EPI | Using multi-epitaxial technology to improve performance|
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| **Parameter** | **Value** | **Description** |
|------------------------|---------------------------|----------------------------------|
| **Package type** | TO247 | Provides good heat dissipation and mechanical strength|
| **Configuration** | Single N-channel MOSFET | Single-channel high-efficiency power switch|
| **Drain-source voltage (VDS)** | 650V | Maximum voltage between drain and source|
| **Gate-source voltage (VGS)** | ±30V | Maximum voltage between gate and source|
| **Turn-on threshold voltage (Vth)** | 3.5V | Minimum voltage required to start conduction|
| **On-resistance (RDS(ON))** | 75mΩ (@VGS = 10V) | On-resistance under high gate voltage|
| **Maximum drain current (ID)** | 47A | Maximum current the device can sustainably carry|
| **Technology** | SJ_Multi-EPI | Using multi-epitaxial technology to improve performance|
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Domain and module applications：
3. Application Fields and Module Examples
1. **Power Conversion Equipment:**
NCE60R180T-VB is an ideal choice for **high voltage DC-DC converters** and **AC-DC converters**. Its high voltage tolerance and low on-resistance ensure stable output in efficient energy conversion.
2. **Solar Inverters:**
In solar photovoltaic systems, this MOSFET can be used in **inverters** to convert DC power into AC power, helping to improve the energy efficiency of the system.
3. **Electric Vehicles:**
Suitable for **charging systems** and **motor drive systems** of electric vehicles, NCE60R180T-VB can provide reliable switching control under high power and high voltage conditions to improve the overall performance of the vehicle.
4. **Industrial Automation:**
In **power control modules** and **drive circuits**, the NCE60R180T-VB can efficiently control large motors and equipment, ensuring high reliability in industrial applications.
5. **High Voltage Power Supplies:**
The high voltage performance of this MOSFET makes it suitable for **high voltage power supply systems**, meeting the needs of various high voltage devices and applications, such as medical equipment and test equipment.
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With its excellent performance characteristics and wide range of applications, the NCE60R180T-VB has become an important component for high voltage applications in the power electronics industry. Its **SJ_Multi-EPI technology** ensures stability and efficiency in high power environments, suitable for a variety of demanding power applications.
1. **Power Conversion Equipment:**
NCE60R180T-VB is an ideal choice for **high voltage DC-DC converters** and **AC-DC converters**. Its high voltage tolerance and low on-resistance ensure stable output in efficient energy conversion.
2. **Solar Inverters:**
In solar photovoltaic systems, this MOSFET can be used in **inverters** to convert DC power into AC power, helping to improve the energy efficiency of the system.
3. **Electric Vehicles:**
Suitable for **charging systems** and **motor drive systems** of electric vehicles, NCE60R180T-VB can provide reliable switching control under high power and high voltage conditions to improve the overall performance of the vehicle.
4. **Industrial Automation:**
In **power control modules** and **drive circuits**, the NCE60R180T-VB can efficiently control large motors and equipment, ensuring high reliability in industrial applications.
5. **High Voltage Power Supplies:**
The high voltage performance of this MOSFET makes it suitable for **high voltage power supply systems**, meeting the needs of various high voltage devices and applications, such as medical equipment and test equipment.
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With its excellent performance characteristics and wide range of applications, the NCE60R180T-VB has become an important component for high voltage applications in the power electronics industry. Its **SJ_Multi-EPI technology** ensures stability and efficiency in high power environments, suitable for a variety of demanding power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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