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NCE60P50K-VB Product details
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The following is the product introduction, parameter description and application examples of **NCE60P50K-VB** single P-channel MOSFET:
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### **I. Product Introduction**
NCE60P50K-VB is a high-efficiency single P-channel MOSFET in TO252 package, suitable for high voltage and high current applications. With a drain-source voltage (VDS) of -60V, this MOSFET can handle higher negative voltages, making it excel in situations where a P-channel switch is required. Its maximum gate-to-source voltage is ±20V, providing flexible drive capability. The device has a threshold voltage (Vth) of -1.7V, ensuring that it can be turned on at low gate voltages. The on-resistance (RDS(ON)) is 25mΩ and 20mΩ at VGS of 4.5V and 10V, respectively, providing low power consumption and high efficiency. The maximum drain current (ID) is -50A, suitable for a variety of high current applications. Thanks to Trench technology, this MOSFET has good switching performance and low conduction losses, making it ideal for applications such as power management and motor drives.
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### **I. Product Introduction**
NCE60P50K-VB is a high-efficiency single P-channel MOSFET in TO252 package, suitable for high voltage and high current applications. With a drain-source voltage (VDS) of -60V, this MOSFET can handle higher negative voltages, making it excel in situations where a P-channel switch is required. Its maximum gate-to-source voltage is ±20V, providing flexible drive capability. The device has a threshold voltage (Vth) of -1.7V, ensuring that it can be turned on at low gate voltages. The on-resistance (RDS(ON)) is 25mΩ and 20mΩ at VGS of 4.5V and 10V, respectively, providing low power consumption and high efficiency. The maximum drain current (ID) is -50A, suitable for a variety of high current applications. Thanks to Trench technology, this MOSFET has good switching performance and low conduction losses, making it ideal for applications such as power management and motor drives.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -50A | 20mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
**II. Detailed parameter description**
- **Model**: NCE60P50K-VB
- **Package**: TO252
- **Configuration**: Single P-channel
- **Drain to source voltage (VDS)**: -60V
- **Gate to source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 25mΩ @ VGS = 4.5V
- 20mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -50A
- **Technology**: Trench
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- **Model**: NCE60P50K-VB
- **Package**: TO252
- **Configuration**: Single P-channel
- **Drain to source voltage (VDS)**: -60V
- **Gate to source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 25mΩ @ VGS = 4.5V
- 20mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -50A
- **Technology**: Trench
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Domain and module applications：
**III. Application fields and module examples**
**1. Power management system**
NCE60P50K-VB is widely used in switching power supplies and DC-DC converters, suitable for high-efficiency power solutions, and can provide low-loss and high-reliability power conversion.
**2. Motor drive**
This MOSFET is very suitable for motor drive circuits such as stepper motors and DC motors, providing high current control and fast switching capabilities to ensure smooth operation of the motor.
**3. Battery management system**
In the battery management system, NCE60P50K-VB can be used for charging and discharging switches, supporting high current switching and ensuring high efficiency and safety of the system.
**4. Consumer electronics**
This device can be used in power switching and control circuits in consumer electronics to help improve the energy efficiency and endurance of the device, especially for mobile phones, tablets and laptops.
**5. LED drive circuit**
Due to its low conduction loss, this MOSFET is also suitable for LED drive applications, ensuring that lighting equipment operates at high efficiency and extending the service life of the product.
NCE60P50K-VB is a very important component in modern electronic design due to its excellent performance and wide range of applications.
**1. Power management system**
NCE60P50K-VB is widely used in switching power supplies and DC-DC converters, suitable for high-efficiency power solutions, and can provide low-loss and high-reliability power conversion.
**2. Motor drive**
This MOSFET is very suitable for motor drive circuits such as stepper motors and DC motors, providing high current control and fast switching capabilities to ensure smooth operation of the motor.
**3. Battery management system**
In the battery management system, NCE60P50K-VB can be used for charging and discharging switches, supporting high current switching and ensuring high efficiency and safety of the system.
**4. Consumer electronics**
This device can be used in power switching and control circuits in consumer electronics to help improve the energy efficiency and endurance of the device, especially for mobile phones, tablets and laptops.
**5. LED drive circuit**
Due to its low conduction loss, this MOSFET is also suitable for LED drive applications, ensuring that lighting equipment operates at high efficiency and extending the service life of the product.
NCE60P50K-VB is a very important component in modern electronic design due to its excellent performance and wide range of applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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