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NCE60P12K-VB Product details

Product introduction:

NCE60P12K-VB Product Introduction

The NCE60P12K-VB is a high-efficiency single P-channel MOSFET in a TO252 package, designed to provide excellent power efficiency and performance. The device has a maximum drain-source voltage (VDS) of -60V and supports a gate-source voltage (VGS) of ±20V, making it suitable for a variety of power management and switching applications. The threshold voltage (Vth) of the NCE60P12K-VB is -1.7V, ensuring efficient switching at low voltages. At a gate voltage of 4.5V, its on-resistance (RDS(ON)) is 72mΩ, which drops to 61mΩ at 10V, and the maximum leakage current (ID) is -30A. The device uses advanced Trench technology, has good thermal management capabilities and switching performance, and is very suitable for high-power and high-current applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-P -60V -1.7V -30A 61mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-P -60V -1.7V -30A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-P -60V -1.7V -30A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-P
Detailed parameter description

- **Model**: NCE60P12K-VB
- **Package**: TO252
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- @ VGS = 4.5V: 72mΩ
- @ VGS = 10V: 61mΩ
- **Continuous leakage current (ID)**: -30A
- **Maximum power dissipation (Ptot)**: Suitable for high power applications
- **Operating temperature range**: -55°C to +150°C
- **Technology**: Trench

Domain and module applications:

Applicable fields and modules

NCE60P12K-VB demonstrates its excellent performance in many fields, mainly suitable for the following application scenarios:

1. **Power management**: Due to its excellent conduction characteristics and low on-resistance, NCE60P12K-VB is often used in DC-DC converter and switching power supply design. This makes it popular in power adapters, chargers and high-efficiency power modules.

2. **Motor drive**: The high current carrying capacity of this MOSFET makes it an ideal choice for motor drive circuits, and is widely used in motor control of power tools, home appliances and industrial automation equipment.

3. **LED lighting drive**: NCE60P12K-VB is suitable for LED drive circuits to ensure stable current and achieve uniform lighting effects, especially for high-power LED lighting systems.

4. **Battery Management System**: In electric vehicles and renewable energy applications, the NCE60P12K-VB can be used for battery charge and discharge management, optimize battery efficiency, and improve system safety and reliability.

5. **Power Switching Application**: The device is suitable for a variety of power switching applications, including communication equipment and high-frequency circuits, due to its fast switching characteristics, providing high efficiency and reliability.

With its excellent electrical characteristics, the NCE60P12K-VB is an ideal choice for a variety of power management and switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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