中文
English
NCE60NP2012K-VB Product details
Back to previous pageProduct introduction：
Product Introduction
NCE60NP2012K-VB is a high-performance common-source N+P channel MOSFET in TO252-4L package, designed for efficient power switching and power management. The device uses advanced Trench technology to provide excellent conduction performance and thermal stability, suitable for a variety of high voltage and high current application scenarios.
---
NCE60NP2012K-VB is a high-performance common-source N+P channel MOSFET in TO252-4L package, designed for efficient power switching and power management. The device uses advanced Trench technology to provide excellent conduction performance and thermal stability, suitable for a variety of high voltage and high current application scenarios.
---
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±60V | 1.8/-1.7V | 35/-19A | 30/50mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±60V | 1.8/-1.7V | 35/-19A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±60V | 1.8/-1.7V | 35/-19A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P |
Detailed parameter description
- **Package type**: TO252-4L
- **Configuration**: Common source N+P channel
- **Drain to source voltage (VDS)**: ±60V
- **Gate to source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**:
- N channel: 1.8V
- P channel: -1.7V
- **On-resistance (RDS(ON))**:
- N channel:
- 33mΩ @ VGS = 4.5V
- 30mΩ @ VGS = 10V
- P channel:
- 60mΩ @ VGS = 4.5V
- 50mΩ @ VGS = 10V
- **Maximum leakage current (ID)**:
- N channel: 35A
- P channel: -19A
- **Technology**: Trench technology
---
- **Package type**: TO252-4L
- **Configuration**: Common source N+P channel
- **Drain to source voltage (VDS)**: ±60V
- **Gate to source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**:
- N channel: 1.8V
- P channel: -1.7V
- **On-resistance (RDS(ON))**:
- N channel:
- 33mΩ @ VGS = 4.5V
- 30mΩ @ VGS = 10V
- P channel:
- 60mΩ @ VGS = 4.5V
- 50mΩ @ VGS = 10V
- **Maximum leakage current (ID)**:
- N channel: 35A
- P channel: -19A
- **Technology**: Trench technology
---
Domain and module applications：
Applications and module examples
1. **Power management**
NCE60NP2012K-VB can be used for efficient power management in switching power supplies (such as AC-DC and DC-DC converters), providing low conduction loss and fast switching response, improving system energy efficiency and stability.
2. **Motor drive**
In motor drive applications, the N+P channel configuration can provide more flexible control schemes, suitable for DC motor and stepper motor drivers, ensuring smooth and efficient power transfer.
3. **Battery management system**
The device is suitable for use as a switching element in a battery management system (BMS), which can manage the charging and discharging process, protect the battery from overcharging and short circuit damage, and improve system safety.
4. **Consumer electronics**
NCE60NP2012K-VB is widely used in various consumer electronic products, such as portable devices and smartphones, to provide efficient switching control for power management modules.
5. **LED driver**
This MOSFET is also suitable for LED driver circuits to ensure uniform brightness of LEDs and extend the service life of LEDs by stabilizing the current.
NCE60NP2012K-VB is widely used in power management, motor drive and consumer electronics, reflecting its importance in high-efficiency and high-current demand scenarios.
1. **Power management**
NCE60NP2012K-VB can be used for efficient power management in switching power supplies (such as AC-DC and DC-DC converters), providing low conduction loss and fast switching response, improving system energy efficiency and stability.
2. **Motor drive**
In motor drive applications, the N+P channel configuration can provide more flexible control schemes, suitable for DC motor and stepper motor drivers, ensuring smooth and efficient power transfer.
3. **Battery management system**
The device is suitable for use as a switching element in a battery management system (BMS), which can manage the charging and discharging process, protect the battery from overcharging and short circuit damage, and improve system safety.
4. **Consumer electronics**
NCE60NP2012K-VB is widely used in various consumer electronic products, such as portable devices and smartphones, to provide efficient switching control for power management modules.
5. **LED driver**
This MOSFET is also suitable for LED driver circuits to ensure uniform brightness of LEDs and extend the service life of LEDs by stabilizing the current.
NCE60NP2012K-VB is widely used in power management, motor drive and consumer electronics, reflecting its importance in high-efficiency and high-current demand scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
